NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount www.onsemi.com applications where board space is at a premium. Features (3) (2) (1) h , 100300 FE Low V , 0.4 V CE(sat) Q Q 1 2 Simplifies Circuit Design Reduces Board Space Reduces Component Count (4) (5) (6) This is a PbFree Device NST3906DP6T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 40 V CEO Collector Base Voltage V 40 V CBO Emitter Base Voltage V 5.0 V EBO Collector Current Continuous I 200 mA C SOT963 Electrostatic Discharge HBM ESD 2 CASE 527AD MM Class B THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit MARKING DIAGRAM Total Device Dissipation T = 25C P 240 mW A D Derate above 25C (Note 1) 1.9 mW/C Thermal Resistance, Junction-to-Ambient R 520 C/W M F JA (Note 1) 1 Total Device Dissipation T = 25C P 280 mW A D Derate above 25C (Note 2) 2.2 mW/C F = Device Code Thermal Resistance, Junction-to-Ambient R 446 C/W JA M = Date Code (Note 2) Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation T = 25C P 350 mW A D ORDERING INFORMATION Derate above 25C (Note 1) 2.8 mW/C Device Package Shipping Thermal Resistance, Junction-to-Ambient R 357 C/W JA (Note 1) NST3906DP6T5G SOT963 8000/Tape & Reel (PbFree) Total Device Dissipation T = 25C P 420 mW A D Derate above 25C (Note 2) 3.4 mW/C For information on tape and reel specifications, Thermal Resistance, Junction-to-Ambient R 297 C/W JA including part orientation and tape sizes, please (Note 2) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2017 Rev. 1 NST3906DP6/DNST3906DP6T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 4) (I = 1.0 mAdc, I = 0) V 40 V C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 40 V C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 V E C (BR)EBO Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nA CE EB CEX ON CHARACTERISTICS (Note 4) DC Current Gain h FE (I = 0.1 mA, V = 1.0 V) 60 C CE (I = 1.0 mA, V = 1.0 V) 80 C CE (I = 10 mA, V = 1.0 V) 100 300 C CE (I = 50 mA, V = 1.0 V) 60 C CE (I = 100 mA, V = 1.0 V) 30 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 1.0 mA) 0.25 C B (I = 50 mA, I = 5.0 mA) 0.4 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 1.0 mA) 0.65 0.85 C B (I = 50 mA, I = 5.0 mA) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 250 MHz C CE T Output Capacitance (V = 5.0 V, I = 0 mA, f = 1.0 MHz) C 4.5 pF CB E obo Input Capacitance (V = 0.5 V, I = 0 mA, f = 1.0 MHz) C 10.0 pF EB E ibo Noise Figure (V = 5.0 V, I = 100 A, R = 1.0 k , f = 1.0 kHz) NF 4.0 dB CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 V, V = 0.5 V) t 35 CC BE d ns Rise Time (I = 10 mA, I = 1.0 mA) t 35 C B1 r Storage Time (V = 3.0 V, I = 10 mA) t 250 CC C s ns Fall Time (I = I = 1.0 mA) t 50 B1 B2 f 4. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 0.40 350 150C (5.0 V) I /I = 10 C B 0.35 300 V = 150C CE(sat) 150C (1.0 V) 0.30 250 0.25 200 25C (5.0 V) 0.20 25C 150 25C (1.0 V) 0.15 55C (5.0 V) 100 0.10 55C (1.0 V) 55C 50 0.05 0 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V) h , DC CURRENT GAIN (V) FE