NST846BF3T5G NPN General Purpose Transistor The NST846BF3T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT1123 www.onsemi.com surface mount package. This device is ideal for lowpower surface mount applications where board space is at a premium. COLLECTOR 3 Features h , 200450 FE 1 Low V , 0.25 V CE(sat) BASE Reduces Board Space This is a HalideFree Device 2 EMITTER This is a PbFree Device NST846BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 65 Vdc CEO Collector Base Voltage V 80 Vdc 2 CBO 11 Emitter Base Voltage V 6.0 Vdc EBO SOT1123 CASE 524AA Collector Current Continuous I 100 mAdc C STYLE 1 THERMAL CHARACTERISTICS (Rotated 90 Clockwise Characteristic Symbol Max Unit Total Device Dissipation, T = 25C P 290 mW A D MARKING DIAGRAM Derate above 25C (Note 1) 2.3 mW/C Thermal Resistance, 432 C/W R JA V M JunctiontoAmbient (Note 1) Total Device Dissipation, T = 25C P 347 mW A D V = Device Code Derate above 25C (Note 2) 2.8 mW/C M = Date Code Thermal Resistance, R 360 C/W JA JunctiontoAmbient (Note 2) Thermal Resistance, R 143 C/W JL ORDERING INFORMATION JunctiontoLead 3 (Note 2) Device Package Shipping Junction and Storage Temperature Range T , T 55 to C J stg +150 NST846BF3T5G SOT1123 8000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 2 1. 100 mm 1 oz, copper traces. refer to our Tape and Reel Packaging Specifications 2 2. 500 mm 1 oz, copper traces. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: March, 2019 Rev. 2 NST846BF3/DNST846BF3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mA) V 65 V C (BR)CEO V 80 V Collector Emitter Breakdown Voltage (I = 10 A, V = 0) C EB (BR)CES Collector Base Breakdown Voltage (I = 10 A) V 80 V (BR)CBO C Emitter Base Breakdown Voltage (I = 1.0 A) V 6.0 V E (BR)EBO Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 290 450 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Input Capacitance (V = 0.5 V, I = 0 mA, f = 1.0 MHz) C 10 pF EB C ibo Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S 0.18 600 150C (5.0 V) I /I = 10 C B 0.16 500 150C (1.0 V) 0.14 400 0.12 V = 150C CE(sat) 25C (5.0 V) 0.10 300 25C (1.0 V) 0.08 25C 55C (5.0 V) 200 0.06 55C (1.0 V) 100 0.04 55C 0 0.02 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V) h , DC CURRENT GAIN (V) FE