ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NST847BDP6T5G Dual General Purpose Transistor The NST847BDP6T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount www.onsemi.com applications where board space is at a premium. Features (3) (2) (1) h , 200450 FE Low V , 0.25 V CE(sat) Q Q Simplifies Circuit Design 1 2 Reduces Board Space Reduces Component Count (4) (5) (6) This is a PbFree Device NST847BDP6T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 45 Vdc CEO Collector Base Voltage V 50 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 100 mAdc C SOT963 CASE 527AD Electrostatic Discharge HBM ESD 2 MM Class B THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic (Single Heated) Symbol Max Unit Total Device Dissipation T = 25C P 240 mW A D Derate above 25C (Note 1) 1.9 mW/C J M Thermal Resistance, Junction-to-Ambient R 520 C/W JA (Note 1) 1 Total Device Dissipation T = 25C P 280 mW A D Derate above 25C (Note 2) 2.2 mW/C J = Device Code Thermal Resistance, Junction-to-Ambient 446 C/W R JA M = Date Code (Note 2) Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation T = 25C P 350 mW ORDERING INFORMATION A D Derate above 25C (Note 1) 2.8 mW/C Device Package Shipping Thermal Resistance, Junction-to-Ambient R 357 C/W JA (Note 1) NST847BDP6T5G SOT963 8000/Tape & Reel (PbFree) Total Device Dissipation T = 25C P 420 mW A D Derate above 25C (Note 2) 3.4 mW/C For information on tape and reel specifications, including part orientation and tape sizes, please Thermal Resistance, Junction-to-Ambient R 297 C/W JA refer to our Tape and Reel Packaging Specifications (Note 2) Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2017 Rev. 1 NST847BDP6/D