NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount NSTB1005DXV5T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS CollectorBase Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO CollectorEmitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CE B CEO EmitterBase Cutoff Current (V = 6.0 V, I = 0) I 0.1 mAdc EB C EBO CollectorBase Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO CollectorEmitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO ON CHARACTERISTICS DC Current Gain h 80 140 FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C E CE(sat) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc OL CC B L Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R /R 0.8 1.0 1.2 1 2 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 0) I 0.1 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 33 47 61 k Resistor Ratio R1/R2 0.8 1.0 1.2 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve