BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit CollectorEmitter Voltage V 45 Vdc CEO CollectorBase Voltage V 60 Vdc 3 CBO SOT23 EmitterBase Voltage V 5.0 Vdc CASE 318 EBO 1 STYLE 6 Collector Current Continuous I 800 mAdc C 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit DG M Total Device Dissipation FR5 Board P 225 mW D (Note 1) T = 25C A Derate above 25C 1.8 mW/C DG = Specific Device Code Thermal Resistance, R 556 C/W JA M = Date Code* JunctiontoAmbient = PbFree Package Total Device Dissipation P 300 mW D (Note: Microdot may be in either location) Alumina Substrate (Note 2) *Date Code orientation and/or overbar may vary T = 25C A depending upon manufacturing location. Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA ORDERING INFORMATION JunctiontoAmbient Junction and Storage Temperature T , T 55 to +150 C Device Package Shipping J stg 1. FR5 = 1.0 0.75 0.062 in. BCW68GLT1G, SOT23 3000 / Tape & 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. NSVBCW68GLT1G (PbFree) Reel BCW68GLT3G SOT23 10000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 8 BCW68GLT1/DBCW68GL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 Vdc (BR)CEO (I = 10 mAdc, I = 0) C B CollectorEmitter Breakdown Voltage V 60 Vdc (BR)CES (I = 10 Adc, V = 0) C EB EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I CES (V = 45 Vdc, I = 0) 20 nAdc CE E (V = 45 Vdc, I = 0, T = 150C) 10 Adc CE B A Emitter Cutoff Current (V = 4.0 Vdc, I = 0) I 20 nAdc EB C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 120 400 C CE (I = 100 mAdc, V = 1.0 Vdc) 160 C CE (I = 300 mAdc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) C B BaseEmitter Saturation Voltage V 2.0 Vdc BE(sat) (I = 500 mAdc, I = 50 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) C CE Output Capacitance C 18 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 105 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Noise Figure N 10 dB F (I = 0.2 mAdc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2