High Voltage Transistor PNP Silicon BSS63LT1G, NSVBSS63LT1G Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COLLECTOR Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector Emitter Voltage V 100 Vdc CEO Collector Emitter Voltage V Vdc CER R = 10 k 110 BE 3 Collector Current Continuous I 100 mAdc C THERMAL CHARACTERISTICS 1 2 Characteristic Symbol Max Unit SOT23 Total Device Dissipation FR5 Board, P mW D CASE 318 (Note 1) T = 25C 225 A STYLE 6 Derate above 25C 1.8 mW/C Thermal Resistance JunctiontoAmbient R 556 C/W JA MARKING DIAGRAM Total Device Dissipation P mW D Alumina Substrate, (Note 2) T = 25C 300 mW/C A Derate above 25C 2.4 BM M Thermal Resistance, JunctiontoAmbient 417 C/W R JA Junction and Storage Temperature T , T 55 to C J stg +150 BM = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. (Note: Microdot may be in either location) 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BSS63LT1G SOT23 3000 / Tape & Reel (Pbfree) NSVBSS63LT1G SOT23 3000 / Tape & Reel (Pbfree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: February, 2021 Rev. 9 BSS63LT1/DBSS63LT1G, NSVBSS63LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 100 Adc) 100 C Collector Emitter Breakdown Voltage V Vdc (BR)CER (I = 10 Adc, I = 0, R = 10 k ) 110 C E BE Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 110 E E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc) 6.0 E Collector Cutoff Current I nAdc CBO (V = 90 Vdc, I = 0) 100 CB E Collector Cutoff Current I Adc CER (V = 110 Vdc, R = 10 k ) 10 CE BE Emitter Cutoff Current I nAdc EBO (V = 6.0 Vdc, I = 0) 200 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 30 C CE (I = 25 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V mVdc CE(sat) (I = 25 mAdc, I = 2.5 mAdc) 250 C B Base Emitter Saturation Voltage V mVdc BE(sat) (I = 25 mAdc, I = 2.5 mAdc) 900 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 25 mAdc, V = 5.0 Vdc, f = 20 MHz) 50 95 C CE Case Capacitance C pF C (I = I = 0, V = 10 Vdc, f = 1.0 MHz) 20 E C CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE g Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. www.onsemi.com 2