MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon MBT2222ADW1, NSVBT2222ADW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 75 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 10 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.01 CB E (V = 60 Vdc, I = 0, T = 125C) 10 CB E A Emitter Cutoff Current (V = 3.0 Vdc, I = 0) I 100 nAdc EB C EBO Base Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 20 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 2) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 2) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 2) 40 C CE Collector Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B Base Emitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 3) f 300 MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 25 pF EB C ibo Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 4.0 C CE Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 75 375 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 5.0 35 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 200 C CE Collector Base Time Constant (I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz) rb, C 150 ps E CB c Noise Figure (I = 100 Adc, V = 10 Vdc, R = 1.0 k , f = 1.0 kHz) NF 4.0 dB C CE S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 30 Vdc, V = 0.5 Vdc, CC BE(off) ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. f is defined as the frequency at which h extrapolates to unity. T fe