MSD42WT1G, NSVMSD42WT1G NPN High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. MSD42WT1G, NSVMSD42WT1G TYPICAL CHARACTERISTICS 1000 1.2 V = 10 V CE I /I = 10 C B 1.0 T = 150C 150C J 0.8 25C 100 0.6 25C 0.4 55C 0.2 55C 10 0.0 0.1 1 10 100 0.1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage vs. Collector Current 1.0 1.0 0.9 0.9 55C 55C 0.8 0.8 0.7 0.7 25C 25C 0.6 0.6 0.5 0.5 0.4 0.4 150C 150C 0.3 0.3 0.2 0.2 0.1 0.1 I /I = 10 V = 10 V C B CE 0 0 0.1 1 10 100 0.1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. BaseEmitter Saturation Voltage vs. Figure 4. BaseEmitter On Voltage vs. Collector Current Collector Current 0 100 V = 10 V CE T = 25C C J ibo 0.4 f = 1 MHz 0.8 10 1.2 C obo 1.6 , for V VB BE 1 2.0 55C to 150C 2.4 2.8 0.1 0.1 1 10 100 0.1 1 10 100 1000 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (VOLTS) C R Figure 5. BaseEmitter Temperature Figure 6. Capacitance Coefficient