NSVT1418L Bipolar Transistor -160 V, -1 A, Low V (sat), PNP CE Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. www.onsemi.com Suitable for automotive applications. AECQ101 qualified and PPAP capable. 3 Features 1 Large Current Capacitance 2 SOT23 Low Collector to Emitter Saturation Voltage CASE 31808 High Speed Switching High Allowable Power Dissipation ELECTRICAL CONNECTION AECQ101 Qualified and PPAP Capable 3 PbFree, Halogen Free and RoHS Compliant Collector Ultra Small Package Facilitates Miniaturization in End Products Typical Applications 1 High Side Switch Base Lighting, Infotainment 2 Emitter ABSOLUTE MAXIMUM RATINGS at T = 25C A Parameter Symbol Value Unit MARKING DIAGRAM Collector to Base Voltage V 180 V CBO Collector to Emitter Voltage V 160 V CEO Emitter to Base Voltage V 6 V EBO CMMM Collector Current I 1 A C Collector Current (Pulse) I 2 A CP Collector Dissipation (Note 1) P 0.42 W C CMM = Specific Device Code M = Single Digit Date Code Junction Temperature Tj 150 C Storage Temperature Range Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 5 of 2 1. Surface mounted on ceramic substrate. (250 mm x 0.8 mm) this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2019 Rev. 0 NSVT1418L/DNSVT1418L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 120 V, I = 0 A 0.1 A CBO CB E Emitter Cutoff Current I V = 4 V, I = 0 A 0.1 A EBO EB C DC Current Gain h V = 5 V, 100 400 FE1 CE I = 100 mA C h V = 5 V, 90 FE2 CE I = 10 mA C GainBandwidth Product f V = 10 V, 120 MHz T CE I = 50 mA C Output Capacitance Cob V = 10 V, 11 pF CB f = 1 MHz Collector to Emitter Saturation Voltage V (sat)1 I = 250 mA, 0.1 0.5 V CE C I = 25 mA B V (sat)2 I = 250 mA, 0.08 0.13 V CE C I = 50 mA B Base to Emitter Saturation Voltage V (sat) I = 250 mA, 0.8 1.2 V BE C I = 25 mA B Collector to Base Breakdown Voltage V 180 V I = 10 A, I = 0 A (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 1 mA, R = 160 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = 10 A, 6 V (BR)EBO E I = 0 A C TurnOn Time t See Figure 1 90 ns on Storage Time t 1000 ns stg Fall Time t 70 ns f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. I B1 PW=20 s DC 1% I B2 OUTPUT INPUT R B V R R L + + 50 100 F 470 F V = 5 V V = 100 V BE CC I = 20I = 20I = 300 mA C B1 B2 Figure 1. Switching Time Test Circuit www.onsemi.com 2