DATA SHEET www.onsemi.com Silicon Carbide (SiC) V R MAX I MAX (BR)DSS DS(ON) D 650 V 70 m 18 V 46 A MOSFET - 44 mohm, 650 V, M2, D2PAK-7L Drain (TAB) NTBG060N065SC1 Features Gate (Pin 1) Typ. R = 44 m V = 18 V DS(on) GS Typ. R = 60 m V = 15 V DS(on) GS Ultra Low Gate Charge (Q = 74 nC) G(tot) Driver Source (Pin 2) Low Output Capacitance (C = 133 pF) oss Power Source (Pins 3, 4, 5, 6, 7) 100% Avalanche Tested T = 175C NCHANNEL MOSFET J RoHS Compliant Typical Applications SMPS (Switching Mode Power Supplies) D 1 Solar Inverters UPS (Uninterruptable Power Supplies) 7 Energy Storage D2PAK7L MAXIMUM RATINGS (T = 25C unless otherwise noted) J CASE 418BJ Parameter Symbol Value Unit DraintoSource Voltage V 650 V DSS MARKING DIAGRAM GatetoSource Voltage V 8/+22 V GS BG060N Recommended Operation Val- T < 175C V 5/+18 V C GSop 065SC1 ues of Gate Source Voltage AYWWZZ Continuous Drain Steady T = 25C I 46 A C D Current (Note 2) State BG060N065SC1 = Specific Device Code Power Dissipation P 170 W D A = Assembly Location (Note 2) Y = Year Continuous Drain Steady T = 100C I 33 A C D WW = Work Week Current (Notes 1, 2) State ZZ = Lot Traceability Power Dissipation P 85 W D (Notes 1, 2) ORDERING INFORMATION Pulsed Drain Current (Note 3) T = 25C I 130 A C DM Operating Junction and Storage Temperature T , T 55 to C Device Package Shipping J stg Range +175 NTBG060N065SC1 D2PAK7L 800 / Tape & Source Current (Body Diode) I 46 A Reel S Single Pulse DraintoSource Avalanche E 51 mJ For information on tape and reel specifications, AS Energy (I = 10.1 A , L = 1 mH) (Note 4) including part orientation and tape sizes, please L pk refer to our Tape and Reel Packaging Specification Maximum Lead Temperature for Soldering, 1/8 T 260 C L Brochure, BRD8011/D. from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. E of 51 mJ is based on starting T = 25C L = 1 mH, I = 10.1 A, AS J AS V = 50 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2022 Rev. 1 NTBG060N065SC1/DNTBG060N065SC1 THERMAL CHARACTERISTICS Parameter Symbol Typ Max Units Thermal Resistance JunctiontoCase (Note 2) R 0.88 C/W JC Thermal Resistance JunctiontoAmbient (Notes 1, 2) R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 650 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 20 mA, refer to 25C 0.15 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 10 A DSS GS J V = 650 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +18/5 V, V = 0 V 250 nA GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 6.5 mA 1.8 2.8 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +18 V GOP DraintoSource On Resistance R V = 15 V, I = 20 A, T = 25C 60 m DS(on) GS D J V = 18 V, I = 20 A, T = 25C 44 70 GS D J V = 18 V, I = 20 A, T = 175C 50 GS D J Forward Transconductance g V = 10 V, I = 20 A 12 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 1473 pF ISS GS V = 325 V DS Output Capacitance C 133 OSS Reverse Transfer Capacitance C 13 RSS Total Gate Charge Q V = 5/18 V, V = 520 V, 74 nC G(TOT) GS DS I = 20 A D GatetoSource Charge Q 20 GS GatetoDrain Charge Q 23 GD f = 1 MHz 3.9 GateResistance R G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/18 V, V = 400 V, 11 ns d(ON) GS DS I = 20 A, R = 2.2 , D G Rise Time t 14 r Inductive Load TurnOff Delay Time t 24 d(OFF) Fall Time t 11 f TurnOn Switching Loss E 45 J ON TurnOff Switching Loss E 18 OFF Total Switching Loss E 63 TOT SOURCEDRAIN DIODE CHARACTERISTICS Continuous SourceDrain Diode Forward I V = 5 V, T = 25C 46 A SD GS J Current Pulsed SourceDrain Diode Forward Current I V = 5 V, T = 25C 130 A SDM GS J (Note 3) Forward Diode Voltage V V = 5 V, I = 20 A, T = 25C 4.3 V SD GS SD J www.onsemi.com 2