DATA SHEET www.onsemi.com Silicon Carbide (SiC) V R MAX I MAX (BR)DSS DS(ON) D MOSFET 12 mohm, 650 V, 650 V 18 m 18 V 163 A M2, TO-247-3L NCHANNEL MOSFET NTHL015N065SC1 D Features Typ. R = 12 m V = 18 V DS(on) GS Typ. R = 15 m V = 15 V DS(on) GS G Ultra Low Gate Charge (Q = 283 nC) G(tot) High Speed Switching with Low Capacitance (C = 430 pF) oss S 100% Avalanche Tested This Device is Halide Free and RoHS Compliant with exemption 7a, PbFree 2LI (on second level interconnection) Typical Applications SMPS (Switching Mode Power Supplies) Solar Inverters G D UPS (Uninterruptable Power Supplies) S TO2473LD Energy Storage CASE 340CX MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 650 V DSS GatetoSource Voltage V 8/+22 V GS Recommended Operation Values T < 175C V 5/+18 V C GSop of GatetoSource Voltage HL015N Continuous Drain Steady T = 25C I 163 A C D 065SC1 Current (Note 1) State Y&Z&3&K Power Dissipation P 643 W D (Note 1) Continuous Drain Steady T = 100C I 115 A C D Current (Note 1) State Power Dissipation P 321 W D (Note 1) HL015N065SC1 = Specific Device Code Pulsed Drain Current T = 25C I 484 A Y = onsemi Logo C DM (Note 2) &Z = Assembly Plant Code &3 = Data Code (Year & Week) Operating Junction and Storage Temperature T , T 55 to C J stg &K = Lot Range +175 Source Current (Body Diode) I 157 A S Single Pulse DraintoSource Avalanche E 84 mJ AS ORDERING INFORMATION Energy (I = 13 A, L = 1 mH) (Note 3) L(pk) Maximum Lead Temperature for Soldering T 300 C L Device Package Shipping (1/8 from case for 5 s) Stresses exceeding those listed in the Maximum Ratings table may damage the NTHL015N065SC1 TO247 30 Units / device. If any of these limits are exceeded, device functionality should not be Long Lead Tube assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 84 mJ is based on starting T = 25C L = 1 mH, I = 13 A, J AS V = 50 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: May, 2022 Rev. 3 NTHL015N065SC1/DNTHL015N065SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 1) R 0.24 C/W JC JunctiontoAmbient Steady State (Note 1) R 40 JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 650 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 20 mA, referenced to 25C 0.12 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 650 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +22/8 V, V = 0 V 250 nA GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 25 mA 1.8 2.63 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +18 V GOP DraintoSource On Resistance R V = 15 V, I = 75 A, T = 25C 15 m DS(on) GS D J V = 18 V, I = 75 A, T = 25C 12 18 GS D J V = 18 V, I = 75 A, T = 175C 16 GS D J Forward Transconductance g V = 10 V, I = 75 A 44 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE V = 0 V, f = 1 MHz, V = 325 V pF Input Capacitance C 4790 ISS GS DS Output Capacitance C 430 OSS Reverse Transfer Capacitance C 33 RSS Total Gate Charge Q V = 5/18 V, V = 520 V, 283 nC G(TOT) GS DS I = 75 A D GatetoSource Charge Q 72 GS GatetoDrain Charge Q 64 GD GateResistance R f = 1 MHz 1.6 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/18 V, V = 400 V, 25 ns d(ON) GS DS I = 75 A, R = 2.2 D G Rise Time t 77 r Inductive load TurnOff Delay Time t 47 d(OFF) Fall Time t 11 f TurnOn Switching Loss E 1371 J ON TurnOff Switching Loss E 470 OFF Total Switching Loss E 1841 tot SOURCEDRAIN DIODE CHARACTERISTICS Continuous SourceDrain Diode Forward I V = 5 V, T = 25C 157 A SD GS J Current Pulsed SourceDrain Diode Forward I 484 SDM Current (Note 2) Forward Diode Voltage V V = 5 V, I = 75 A, T = 25C 4.6 V SD GS SD J www.onsemi.com 2