DATA SHEET www.onsemi.com R1 Low Capacitance 1 8 Cd Cd 3 Line EMI Filter with R2 ESD Protection in UDFN8 2 7 Cd Cd Package R1 3 6 NUF3102MU Cd Cd This device is a 3 line EMI filter array for wireless applications. Greater than 25 dB attenuation is obtained at frequencies from 4 5 800 MHz to 5.0 GHz. The NUF3102MU has a cut off frequency of Cd Cd 150 MHz and can be used in applications for data rate up to 58 MHz or 116 Mbps. This UDFN package is specifically designed to enhance (Top View) EMI filtering for lowprofile or slim design electronics especially where space and height is a premium. It also offers ESD protectionclamping transients from static discharges. ESD protection MARKING 8 is provided across all capacitors. DIAGRAM 1 Features 32 M UDFN8 1 EMI Filtering and ESD Protection CASE 517AD Integration of 19 Discrete Components 32 = Specific Device Code Compliance with IEC6100042 (Level 4) M = Month Code > 8 kV (Contact) = PbFree Package > 15 kV (Air) UDFN Package, 1.2 x 1.8 mm Moisture Sensitivity Level 1 PIN CONNECTIONS ESD Ratings: Machine Model = C 14 Human Body Model = 3B These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant NC GND NC Benefits Reduces EMI/RFI Emissions on a Data Line 8 5 Low Profile Package Typical Height of 0.5 mm DesignFriendly and EasytoUse Pin Configurations, ORDERING INFORMATION Particularly for Portable Electronics Integrated Solution Offers Cost and Space Savings in UDFN Package Device Package Shipping Reduces Parasitic Inductances Which Offer a More Ideal Low Pass NUF3102MUTAG UDFN8 3000 / Tape & Reel Filter Response (PbFree) Integrated Solution Improves System Reliability For information on tape and reel specifications, including part orientation and tape sizes, please Applications refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. EMI Filtering and ESD Protection for Data Lines Keypad Interface and Protection for Portable Electronics Bottom Connector Interface for Mobile Handsets Notebook Computers and Digital Cameras LCD Display Interface in Mobile Handsets Camera Display Interface in Mobile Handsets Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2021 Rev. 4 NUF3102MU/DNUF3102MU MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 V kV PP Contact Discharge 14 Machine Model 0.4 Human Body Model 8.0 Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 10 mA 85 100 115 1 R Resistance R I = 10 mA 40 47 54 2 R Capacitance (Notes 1 and 2) Cd V = 2.5 V, f = 1.0 MHz 10 13 16 pF R CutOff Frequency (Note 3) f Above this frequency, 150 MHz 3dB appreciable attenuation occurs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Measured at 25C. 2. Total Line Capacitance is two times the Diode Capacitance (Cd). 3. 50 source and 50 load termination. www.onsemi.com 2