NUF4001MU 4-Channel EMI Filter with Integrated ESD Protection The NUF4001MU is a fourchannel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 13 pF deliver a cutoff frequency of 150 MHz and www.onsemi.com stop band attenuation greater than 25 dB from 800 MHz to 5.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 100 Mbps in applications where wireless interference MARKING 8 must be minimized. The specified attenuation range is very effective DIAGRAM in minimizing interference from 2G/3G, GPS, Bluetooth and 1 41 M WLAN signals. UDFN8 1 The NUF4001MU is available in the lowprofile 8lead 1.2x1.8mm CASE 517AD UDFN8 surface mount package. 41 = Specific Device Code Features/Benefits M = Month Code 14 kV ESD Protection on each channel (IEC6100042 Level 4, = PbFree Package Contact Discharge) 16 kV ESD Protection on each channel (HBM) ORDERING INFORMATION R/C Values of 100 and 13 pF deliver Exceptional S21 Performance Characteristics of 150 MHz f and 25 dB Stop Band Attenuation 3dB Device Package Shipping from 800 MHz to 5.0 GHz NUF4001MUT2G UDFN8 3000 / Tape & Reel Integrated EMI/ESD System Solution in UDFN Package Offers (PbFree) Exceptional Cost, System Reliability and Space Savings For information on tape and reel specifications, These Devices are PbFree, Halogen Free/BFR Free and are RoHS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Compliant Brochure, BRD8011/D. Applications EMI Filtering for LCD and Camera Data Lines EMI Filtering and Protection for I/O Ports and Keypads 0 5 10 15 20 R=100 Filter + ESD Filter + ESD n n 25 C = 13 pF C = 13 pF d d 30 35 See Table 1 for pin description 40 45 50 1.0E+6 10.0E+6 100E+6 1.0E+9 10.0E+9 FREQUENCY (Hz) Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Curve Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2017 Rev. 8 NUF4001MU/D S21 (dB)NUF4001MU 14 8 5 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 8 Filter + ESD Channel 1 Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 V kV PP Contact Discharge 14 Machine Model 1.6 Human Body Model 16 Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 10 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 10 13 16 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 20 26 32 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 150 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 260 MHz 6dB appreciable attenuation occurs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. 50 source and 50 load termination. www.onsemi.com 2