NVMFS5C442NL Power MOSFET 40 V, 2.5 m , 130 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses www.onsemi.com G NVMFS5C442NLWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 2.5 m 10 V These Devices are PbFree and are RoHS Compliant 40 V 130 A 3.7 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 130 A C D Current R JC G (4) T = 100C 95 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 83 W C D R (Note 1) JC S (1,2,3) T = 100C 42 C NCHANNEL MOSFET Continuous Drain T = 25C I 28 A A D Current R JA T = 100C 20 (Notes 1, 2, 3) A Steady MARKING State Power Dissipation T = 25C P 3.7 W A D DIAGRAM R (Notes 1 & 2) JA T = 100C 1.8 A D 1 Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM S D XXXXXX DFN5 S Operating Junction and Storage Temperature T , T 55 to C J stg AYWZZ (SO8FL) S +175 CASE 488AA G D Source Current (Body Diode) I 81 A S STYLE 1 D Single Pulse DraintoSource Avalanche E 265 mJ AS XXXXXX = 5C442L Energy (I = 10 A) L(pk) XXXXXX = (NVMFS5C442NL) or Lead Temperature for Soldering Purposes T 260 C L XXXXXX = 442LWF (1/8 from case for 10 s) XXXXXX = (NVMFS5C442NLWF) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 1.8 C/W JC ORDERING INFORMATION JunctiontoAmbient Steady State (Note 2) 41 R See detailed ordering, marking and shipping information in the JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 8 NVMFS5C442NL/DNVMFS5C442NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 24.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V DS T = 125C 250 A J V = 0 V, V = 20 V, T = 125C 20 GS DS J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 90 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 2.0 2.5 DS(on) GS D m V = 4.5 V I = 50 A 2.9 3.7 GS D Forward Transconductance g V = 15 V, I = 50 A 116 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3100 ISS Output Capacitance C 1100 OSS V = 0 V, f = 1 MHz, V = 25 V pF GS DS Reverse Transfer Capacitance C 37 RSS Total Gate Charge Q V = 4.5 V, V = 32 V I = 50 A 23 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 32 V I = 50 A 50 G(TOT) GS DS D Threshold Gate Charge Q 5.0 nC G(TH) GatetoSource Charge Q 9.8 GS V = 4.5 V, V = 32 V I = 50 A GS DS D GatetoDrain Charge Q 6.7 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 d(ON) Rise Time t 8.3 r V = 4.5 V, V = 32 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 9.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.73 J Reverse Recovery Time t 46 RR Charge Time t 23 a ns V = 0 V, dI /dt = 100 A/ s, GS S I = 50 A S Discharge Time t 23 b Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2