NXH160T120L2Q1PG, NXH160T120L2Q1SG Q1PACK Module This high density, integrated power module combines highperformance IGBTs with rugged antiparallel diodes. Features www.onsemi.com Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation PACKAGE PICTURE Module Design Offers High Power Density Low Inductive Layout Q1PACK Package with PressFit and Solder Pins Typical Applications Solar Inverters Uninterruptable Power Supplies Q1PACK Q1PACK CASE 180AD CASE 180AQ PRESS FIT SOLDER PINS DEVICE MARKING NXH160T120L2Q1xG ATYYWW SCHEMATIC 17,18,19,20 D5 x = P or S G = PbFree Package T1 D1 AT = Assembly & Test Site Code 21 YYWW = Year and Work Week Code 22 D2 D6 15,16 23,24,25,26 PIN ASSIGNMENTS 10 9 T2 T3 14 13 D7 7,8 27,28,29,30 D3 D8 T4 D4 1 11 12 NTC 2 3,4,5,6 ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2018 Rev. 2 NXH160T120L2Q1/DNXH160T120L2Q1PG, NXH160T120L2Q1SG Table 1. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit HALFBRIDGE IGBT INVERSE DIODE (D1, D4) Peak Repetitive Reverse Voltage V 1200 V RRM Forward Current, DC T = 80C I 20 A h F Repetitive Peak Forward Current I 80 A FRM T limited by T pulse jmax Power Dissipation per Diode P 51 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J HALFBRIDGE IGBT (T1, T4) Collectoremitter voltage V 1200 V CES Collector current T = 80C I 140 A h C Pulsed Collector Current, T Limited by T I 480 A pulse jmax CM Power Dissipation per IGBT P 280 W tot T = T T = 80C j jmax h Gateemitter voltage V 20 V GE Short Circuit Withstand Time T 10 s SC V = 15 V, V = 600 V, T 150C GE CE J Maximum Junction Temperature T 150 C J NP DIODE (D6, D7) Peak Repetitive Reverse Voltage V 650 V RRM Forward Current, DC T = 80C I 58 A h F Repetitive Peak Forward Current, T limited by T I 200 A pulse Jmax FRM Power Dissipation Per Diode P 89 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J NP IGBT (T2, T3) Collectoremitter voltage V 650 V CES Collector current T = 80C I 83 A h C Pulsed collector current, T limited by T I 235 A pulse Jmax CM Power Dissipation Per IGBT P 117 W tot T = T T = 80C j jmax h Gateemitter voltage V 20 V GE Short Circuit Withstand Time T 5 s sc V = 15 V, V = 400 V, T 150C GE CE J Maximum Junction Temperature T 150 C J NP INVERSE DIODE (D2, D3) Peak Repetitive Reverse Voltage V 650 V RRM Forward Current, DC T = 80C I 17 A h F Repetitive Peak Forward Current, T limited by T I 68 A pulse Jmax FRM Power Dissipation Per Diode P 28 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J HALFBRIDGE DIODE (D5, D8) Peak Repetitive Reverse Voltage V 1200 V RRM Forward Current, DC T = 80C (per diode) I 45 A h F Repetitive Peak Forward Current, T limited by T I 180 A pulse Jmax FRM Power Dissipation Per Diode P 78 W tot T = T T = 80C j jmax h www.onsemi.com 2