DATA SHEET www.onsemi.com PACKAGE PICTURE Three Level NPC Q2Pack Module NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R This high denity, integrated power module combines highperformance IGBTs with rugged antiparallel diodes. Q2PACK INPC PRESS FIT PINS CASE 180BH Features Extremely Efficient Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Module Design Offers High Power Density Low Inductive Layout Low Package Height These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Q2PACK INPC SOLDER PINS CASE 180BS Solar Inverters Uninterruptable Power Supplies Systems MARKING DIAGRAM NXH350N100H4Q2F2P1G/S1G ATYYWW G = PbFree Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH350N100H4Q2F2P1G/S1G/SGR Schematic Diagram Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: January, 2022 Rev. 3 NXH350N100H4Q2F2P1G/DNXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G R PIN CONNECTIONS Figure 2. Pin Connections ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit OUTER IGBT (T1, T4) Collector-Emitter Voltage V 1000 V CES Gate-Emitter Voltage V 20 V GE Positive Transient GateEmitter Voltage (T = 5 s, D < 0.10) 30 pulse Continuous Collector Current T = 80C I 303 A C C Pulsed Peak Collector Current T = 80C (T = 150C) I 909 A C J C(Pulse) Maximum Power Dissipation (T = 150C) P 592 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX INNER IGBT (T2, T3) Collector-Emitter Voltage V 1000 V CES Gate-Emitter Voltage V 20 V GE Positive Transient GateEmitter Voltage (T = 5 s, D < 0.10) 30 pulse Continuous Collector Current T = 80C I 298 A C C Pulsed Peak Collector Current T = 80C (T = 150C) I 894 A C J C(Pulse) Maximum Power Dissipation (T = 175C) P 731 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX IGBT INVERSE DIODE (D1, D2, D3, D4) Peak Repetitive Reverse Voltage V 1000 V RRM Continuous Forward Current T = 80C I 133 A C F Repetitive Peak Forward Current (T = 175C) I 399 A J FRM Maximum Power Dissipation (T = 175C) P 276 W J tot www.onsemi.com 2