Product Information

NXH350N100H4Q2F2P1G

NXH350N100H4Q2F2P1G electronic component of ON Semiconductor

Datasheet
IGBT Modules SiC Hybrid Module I-Type NPC 1000 V 350 A IGBT 1200 V 100 A SiC Diode Press-fit pins
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 310.349 ea
Line Total: USD 310.35

30 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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NXH350N100H4Q2F2P1G
ON Semiconductor

1 : USD 235.1421
10 : USD 229.2215
25 : USD 229.2215
36 : USD 227.94
108 : USD 227.9281
252 : USD 227.9163
504 : USD 227.9044
1008 : USD 227.7976
2520 : USD 227.7264

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Additional Infomation About Product

DATA SHEET www.onsemi.com PACKAGE PICTURE Three Level NPC Q2Pack Module NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R This high denity, integrated power module combines highperformance IGBTs with rugged antiparallel diodes. Q2PACK INPC PRESS FIT PINS CASE 180BH Features Extremely Efficient Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Module Design Offers High Power Density Low Inductive Layout Low Package Height These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Q2PACK INPC SOLDER PINS CASE 180BS Solar Inverters Uninterruptable Power Supplies Systems MARKING DIAGRAM NXH350N100H4Q2F2P1G/S1G ATYYWW G = PbFree Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH350N100H4Q2F2P1G/S1G/SGR Schematic Diagram Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: January, 2022 Rev. 3 NXH350N100H4Q2F2P1G/DNXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G R PIN CONNECTIONS Figure 2. Pin Connections ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit OUTER IGBT (T1, T4) Collector-Emitter Voltage V 1000 V CES Gate-Emitter Voltage V 20 V GE Positive Transient GateEmitter Voltage (T = 5 s, D < 0.10) 30 pulse Continuous Collector Current T = 80C I 303 A C C Pulsed Peak Collector Current T = 80C (T = 150C) I 909 A C J C(Pulse) Maximum Power Dissipation (T = 150C) P 592 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX INNER IGBT (T2, T3) Collector-Emitter Voltage V 1000 V CES Gate-Emitter Voltage V 20 V GE Positive Transient GateEmitter Voltage (T = 5 s, D < 0.10) 30 pulse Continuous Collector Current T = 80C I 298 A C C Pulsed Peak Collector Current T = 80C (T = 150C) I 894 A C J C(Pulse) Maximum Power Dissipation (T = 175C) P 731 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX IGBT INVERSE DIODE (D1, D2, D3, D4) Peak Repetitive Reverse Voltage V 1000 V RRM Continuous Forward Current T = 80C I 133 A C F Repetitive Peak Forward Current (T = 175C) I 399 A J FRM Maximum Power Dissipation (T = 175C) P 276 W J tot www.onsemi.com 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

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FAIRCHILD
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Fairchild Semiconductor
FS8
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ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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