P2N2222A Amplifier Transistors NPN Silicon Features These are Pb Free Devices* P2N2222A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 40 C B Collector Base Breakdown Voltage V 75 Vdc (BR)CBO (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) 10 CE EB(off) Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.01 CB E (V = 60 Vdc, I = 0, T = 150C) 10 CB E A Emitter Cutoff Current I 10 nAdc EBO (V = 3.0 Vdc, I = 0) EB C Collector Cutoff Current I nAdc CEO (V = 10 V) 10 CE Base Cutoff Current I nAdc BEX (V = 60 Vdc, V = 3.0 Vdc) 20 CE EB(off) ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 1) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 1) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 1) 40 C CE Collector Emitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B Base Emitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz)C 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 25 EB C Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 4.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 75 375 C CE Output Admittance h Mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 5.0 35 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 200 C CE Collector Base Time Constant rbC ps c (I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz) 150 E CB Noise Figure N dB F (I = 100 Adc, V = 10 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f is defined as the frequency at which h extrapolates to unity. T fe