15 A, 600 V Hyperfast Rectifier RHRG1560CC-F085 www.onsemi.com Max Ratings (600 V, 15 A) The RHRG1560CCF085 is an Hyperfast diode with soft recovery characteristics (t < 55 ns). It has half the recovery time of ultrafast rr diode and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive TO2473LD applications. CASE 340CK Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing MARKING DIAGRAM power loss in the switching transistors. Features High Speed Switching (t = 26 ns(Typ.) I = 15 A) Y&Z&3&K rr F RHRG1560C Low Forward Voltage (V = 1.86 V(Typ.) I = 15 A) F F Avalanche Energy Rated AECQ101 Qualified and PPAP Capable RHRG1560C = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Y = ON Semiconductor Logo Compliant &Z = Assembly Lot Code &3 = Numeric Date Code Applications &K = Assembly Location Switching Power Supply Power Switching Circuits ORDERING INFORMATION Automotive and General Purpose See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2019 Rev. 4 RHRG1560CCF085/DRHRG1560CC F085 PIN ASSIGNMENTS JEDEC STYLE T0 247 K ANODE 1 CATHODE CATHODE ANODE 2 (BOTTOM SIDE METAL) A1 A2 ABSOLUTE MAXIMUM RATINGS (T = 25C Unless Otherwise Noted) C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current T = 25 C 15 A F(AV) C I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) 45 A FSM E Avalanche Energy (1 A, 40 mH) 20 mJ AVL T , T Operating Junction and Storage Temperature 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) C Symbol Parameter Max Units RJC Maximum Thermal Resistance, Junction to Case 1.37 C/W RJA Maximum Thermal Resistance, Junction to Ambient 45 C/W PACKAGE MARKING AND ORDIRING INFORMATION Device Marking Device Package Tube Quantity RHRG1560C RHRG1560CCF085 TO247 30 ELECTRICAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) C Symbol Parameter Conditions Min. Typ. Max Units T = 25C I Instantaneous Reverse Current V = 600 V C 100 A R R T = 175C C 1000 A V Instantaneous Forward Voltage I = 15 A T = 25C 1.86 2.3 V F C FM (Note 1) T = 175C 1.28 1.6 V C t I =1 A, di/dt = 100 A/ s, V = 390 V Reverse Recovery Time F CC T = 25C 25 50 ns rr C (Note 2) I =15 A, di/dt = 100 A/ s, V = 390 V T = 25C 26 55 ns F CC C T = 175C 137 ns C t Reverse Recovery Time I =15 A, di/dt = 100 A/ s, V = 390 V ns a T = 25C 15 F CC C t ns 11 b Q Reverse Recovery Charge nC rr 21 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse : Test Pulse width = 300 s, Duty Cycle = 2%. 2. Guaranteed by design. www.onsemi.com 2