Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes www.onsemi.com andissilicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. CATHODE Features ANODE Hyperfast Recovery ( t = 50 ns ( I = 50 A ) rr F JEDEC STYLE Max Forward Voltage( V = 2.1 V ( T = 25 C ) TO247 F C 340CL 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant MARKING DIAGRAM Applications Switching Power Supplies Power Switching Circuits Y&Z&3&K RHRG5060 General Purpose ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Y = ON Semiconductor Logo &Z = Assembly Plant Code Average Rectified Forward Current I 50 A F(AV) &3 = Numeric Date Code (T = 93 C) C &K = Lot Code Repetitive Peak Surge Current I 100 A FRM RHRG5060 = Specific Device Code (Square Wave, 20 kHz) Nonrepetitive Peak Surge Current I 500 A FSM (Halfwave 1 Phase, 60 Hz) Maximum Power Dissipation P 150 W D Avalanche Energy E 40 mJ AVL 1. Cathode 2. Anode (See Figure 10 and Figure 11) Operating and Storage Temperature T T 65 to C STG, J +175 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 2 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: July, 2021 Rev. 4 RHRG5060/DRHRG5060 PACKAGE MARKING AND ORDERING INFORMATION Part Number Package Brand RHRG5060 TO2472L RHRG5060 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Instantaneous Forward Voltage I = 50 A 2.1 V F F (Pulse Width = 300 s, Duty Cycle = 2%) I = 50 A, 1.7 V F T = 150C C I Instantaneous Reverse Current V = 600 V 250 A R R V = 600 V 1.5 mA R T = 150C C t Reverse Recovery Time (See Figure 9 ) I = 1 A, 45 ns rr F Summation of t + t dl /dt = 100 A/ s a b F I = 50 A, 50 ns F dI /dt = 100 A/ s F t Time to Reach Peak Reverse Current (See Figure 9) I = 50 A, 25 ns a F dI /dt = 100 A/ s F t Time from Peak I to Projected Zero Crossing of I I = 50 A, 20 ns b RM RM F Based on a Straight Line from Peak I Through 25% dI /dt = 100 A/ s RM F of I (See Figure 9) RM Q Reverse Recovery Charge I = 50 A, 65 nC rr F dI /dt = 100 A/ s F C Junction Capacitance V = 10 V, 140 pF J R I = 0 A F Thermal Resistance Junction to Case 1.0 C/W R JC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2