Hyperfast Rectifier 50 A, 600 V RHRG5060-F085 Description The RHRG5060F085 is an hyperfast diode with softrecovery characteristics (trr < 45ns). It has half the recovery time of ultrafast www.onsemi.com diode and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss CATHODE in the switching transistors. ANODE Features High Speed Switching ( t = 45 ns (Typ.) I = 50 A ) TO2472L rr F 340CL Low Forward Voltage( V = 1.67 V (Typ.) I = 50 A ) F F Avalanche Energy Rated AECQ101 Qualified MARKING DIAGRAM This Device is PbFree Applications Y&Z&3&K Switching Power Supply RHRG5060 Power Switching Circuits General Purpose Automotive and General Purpose ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Y = ON Semiconductor Logo Working Peak Reverse Voltage V 600 V RWM &Z = Assembly Plant Code &3 = Numeric Date Code DC Blocking Voltage V 600 V R &K = Lot Code Average Rectified Forward Current I 50 A F(AV) RHRG5060 = Specific Device Code T = 25 C C Nonrepetitive Peak Surge Current I 150 A FSM (Halfwave 1 Phase 50 Hz) Avalanche Energy E 40 mJ AVL (1.4 A, 40 mH) 1. Cathode 2. Anode Operating Junction and Storage T T 55 to C J, STG, Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 2 of assumed, damage may occur and reliability may be affected. this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: March, 2020 Rev. 4 RHRG5060F085/DRHRG5060 F085 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Max Units R Maximum Thermal Resistance, Junction to Case 0.42 C/W JC R Maximum Thermal Resistance, Junction to Ambient 45 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity RHRG5060 RHRG5060F085 TO247 30 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit I Instantaneous Reverse Current V = 600 V T = 25C 250 uA R R C T = 175C 1.5 mA C V Instantaneous Forward Voltage I = 50 A T = 25C 1.67 2.1 V FM F C (Note 1) T = 175C C 1.29 1.7 V I = 1 A, T = 25C t Reverse Recovery Time 37 45 ns F C rr di/dt = 100 A/ s, (Note 2) V = 390 V CC I = 50 A, T = 25C F C 45 60 ns di/dt = 100 A/ s, V = 390 V T = 175C C 200 ns CC ta Reverse Recovery Time I = 50 A, T = 25C 25 ns F C tb di/dt = 100 A/ s, 20 ns Q Reverse Recovery Charge V = 390 V 45 nC rr CC 1. Pulse : Test Pulse width = 300 s, Duty Cycle = 2% 2. Guaranteed by design Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2