ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. RHRP1540, RHRP1560 Data Sheet November 2013 Features 15 A, 400 V - 600 V, Hyperfast Diode Hyperfast Recovery t = 40 ns ( I = 15 A) rr F The RHRP1540, RHRP1560 is a hyperfast diode with soft Max Forward Voltage, V = 2.1 V ( T = 25C) F C recovery characteristics. It has the half recovery time of 400 V, 600 V Reverse Voltage and High Reliability ultrafast diodes and is silicon nitride passivated Avalanche Energy Rated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping RoHS Compliant diodes and diodes in a variety of switching power supplies and other power switching applications. Their Applications low stored charge and hyperfast soft recovery minimize Switching Power Supplies ringing and electrical noise in many power switching Power Switching Circuits circuits reducing power loss in the switching transistors. General Purpose Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC TO-220AC RHRP1540 TO-220AC-2L RHRP1540 ANODE RHRP1560 TO-220AC-2L RHRP1560 CATHODE CATHODE NOTE: When ordering, use the entire part number. (FLANGE) Symbol K A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRP1540 RHRP1560 UNIT Peak Repetitive Reverse Voltage . V 400 600 V RRM Working Peak Reverse Voltage V 400 600 V RWM DC Blocking Voltage .V 400 600 V R Average Rectied Forward Current . I 15 15 A F(AV) o (T = 140 C) C Repetitive Peak Surge Current . I 30 30 A FRM (Square Wave, 20 kHz) Nonrepetitive Peak Surge Current . I 200 200 A FSM (Halfwave, 1 Phase, 60 Hz) Maximum Power Dissipation .P 100 100 W D Avalanche Energy (See Figures 10 and 11) . E 20 20 mJ AVL o Operating and Storage Temperature T , T -65 to 175 -65 to 175 C STG J 2001 Semiconductor Components Industries, LLC. 1 Publication Order Number: October-2017, Rev. 3 RHRP156 0/D