SB80W10T-TL-H ON Semiconductor

Ordering number : ENA1817A SB80W10T Schottky Barrier Diode SB80W10T Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =1mA, Tj=25C *2 100 V R R Forward Voltage V I =3.0A, Tj=25C *2 0.8 V F F Reverse Current I V =50V, Tj=25C *2 0.1 mA R R Interterminal Capacitance C V =10V, Tj=25C *2 90 pF R Transient Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 6 C / W Note) 2. Value per element * Ordering Information Device Package Shipping memo SB80W10T-H TP 500pcs./bag Pb Free and Halogen Free SB80W10T-TL-H TP-FA 700pcs./reel I -- V I -- V F F R R 10 1E+04 1E+03 1E+02 1E+01 1.0 1E+00 1E-01 1E-02 1E-03 0.1 1E-04 1E-05 1E-06 0.01 1E-07 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 Forward Voltage, V -- V IT15887 Reverse Voltage, V -- V IT15888 F R Tc max -- I C -- V O R 7 175 f=1MHz 5 150 3 125 2 100 (5) 100 7 75 (3) 5 (4) 50 (1)Rectangular wave =60 (1) (2) 3 (2)Rectangular wave =120 2 (3)Rectangular wave =180 25 (4)Sine wave =180 (5)DC 0 10 0 12 3 4 56 7 8 9 2 35 7 2 35 7 2 1.0 10 100 IT15890 Average Output Current, I -- A IT15889 Reverse Voltage, V -- V O R No. A1817-2/7 125C 100C Ta=150C 75C 50C 25C 0C --25C 100C 125C Ta=150C 50C 75C 25C --25C 0C Case Temperature, Tc max -- C Forward Current, I -- A F Reverse Current, I -- mA Interterminal Capacitance, C -- pF R