BAS16DXV6 Dual Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 6 1 MAXIMUM RATINGS (T = 25C) A 4 3 Rating Symbol Max Unit Continuous Reverse Voltage V 100 V R 4 5 6 Recurrent Peak Forward Current I 200 mA F 3 2 Peak Forward Surge Current I 500 mA 1 FM(surge) Pulse Width = 10 s SOT563 THERMAL CHARACTERISTICS CASE 463A PLASTIC Characteristic (One Junction Heated) Symbol Max Unit MARKING DIAGRAM Total Device Dissipation (Note 1) P D T = 25C 357 mW A A6 M Derate above 25C 2.9 mW/C Thermal Resistance, R 350 C/W JA Junction-to-Ambient (Note 1) A6 = Specific Device Code M = Date Code Characteristic = PbFree Package (Both Junctions Heated) Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation (Note 1) P D T = 25C 500 mW A Derate above 25C 4.0 mW/C ORDERING INFORMATION Thermal Resistance, R 250 C/W JA Device Package Shipping Junction-to-Ambient (Note 1) BAS16DXV6T1G SOT563 4000 / Tape & Junction and Storage Temperature T , T 55 to +150 C J stg (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be SBAS16DXV6T1G SOT563 4000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR4 Minimum Pad For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2015 Rev. 5 BAS16DXV6/DBAS16DXV6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Forward Voltage V mV F 715 (I = 1.0 mA) F 855 (I = 10 mA) F 1000 (I = 50 mA) F 1250 (I = 150 mA) F Reverse Current I A R 1.0 (V = 100 V) R 50 (V = 75 V, T = 150C) R J 30 (V = 25 V, T = 150C) R J Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 6.0 ns rr (I = I = 10 mA, R = 50 ) (Figure 1) F R L Stored Charge QS 45 PC (I = 10 mA to V = 6.0 V, R = 500 ) (Figure 2) F R L Forward Recovery Voltage V 1.75 V FR (I = 10 mA, t = 20 ns) (Figure 3) F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2