Switching Diode BAS16L Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS CATHODE ANODE Rating Symbol Value Unit Continuous Reverse Voltage V 100 V R Peak Forward Current I 200 mA F 3 MARKING NonRepetitive Peak Forward Surge I 1.8 A FSM(surge) DIAGRAM Current 60 Hz 1 Repetitive Peak Forward Current I 1.0 A 2 FRM (Note 3) A6 M SOT23 CASE 318 NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to STYLE 8 1 J surge) t = 1 s 36.0 t = 10 s 18.0 A6 = Specific Device Code t = 100 s 6.0 M = Date Code* 3.0 t = 1 ms = PbFree Package 1.8 t = 10 ms 1.3 (Note: Microdot may be in either location) t = 100 ms t = 1 s 1.0 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Total Device Dissipation FR5 Board P D BAS16LT1G SOT23 3000/Tape & Reel (Note 1) 225 mW (PbFree) T = 25C A Derate above 25C 1.8 mW/C BAS16LT3G SOT23 10000/Tape & Reel (PbFree) Thermal Resistance, JunctiontoAmbient R 556 C/W JA SBAS16LT1G SOT23 3000/Tape & Reel (PbFree) Total Device Dissipation P D Alumina Substrate, (Note 2) 300 mW SBAS16LT3G SOT23 10000/Tape & Reel T = 25C A (PbFree) Derate above 25C 2.4 mW/C For information on tape and reel specifications, Thermal Resistance, including part orientation and tape sizes, please JunctiontoAmbient R 417 C/W JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, T = 25C prior to surge. J Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: February, 2020 Rev. 14 BAS16LT1/DBAS16L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 V) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2