BAS20H High Voltage Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and www.onsemi.com PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant HIGH VOLTAGE MAXIMUM RATINGS SWITCHING DIODE Rating Symbol Value Unit Continuous Reverse Voltage V 200 Vdc R Repetitive Peak Reverse Voltage V 200 Vdc RRM 1 2 Continuous Forward Current I 200 mAdc F CATHODE ANODE Peak Forward Surge Current I 625 mAdc FM(surge) Repetitive Peak Forward Current I 500 mA FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) 2 NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to surge) J t = 1 s 5.0 1 t = 1 ms 2.0 t = 1 s 0.5 SOD323 CASE 477 THERMAL CHARACTERISTICS STYLE 1 Characteristic Symbol Max Unit Total Device Dissipation FR5 Board* P D T = 25C 200 mW A MARKING DIAGRAM Derate above 25C 1.57 mW/C Thermal Resistance JunctiontoAmbient R 635 C/W JA JR M Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the JR = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. M = Date Code* = PbFree Package *FR5 Minimum Pad (Note: Microdot may be in either location) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A *Date Code orientation may vary depending upon manufacturing location. Characteristic Symbol Min Max Unit OFF CHARACTERISTICS ORDERING INFORMATION Reverse Voltage Leakage Current I R (V = 200 Vdc) 1.0 Adc R Device Package Shipping (V = 200 Vdc, T = 150C) 100 R J BAS20HT1G SOD323 3000 / Tape & Reel Reverse Breakdown Voltage V (BR) (PbFree) (I = 100 Adc) 250 Vdc BR Forward Voltage V SBAS20HT1G SOD323 3000 / Tape & Reel F (I = 100 mAdc) 1000 mV (PbFree) F (I = 200 mAdc) 1250 F For information on tape and reel specifications, Diode Capacitance C 5.0 pF D including part orientation and tape sizes, please (V = 0, f = 1.0 MHz) R refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 7 BAS20HT1/DBAS20H 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 Output 50 Input I R Pulse Sampling V R OUTPUT PULSE Generator Oscilloscope INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 150C 125C 10 55C 100 1.0 25C 55C 10 0.1 125C 25C 1.0 0.01 150C 40C 40C 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 300 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 2. Forward Current Figure 3. Leakage Current 2.0 1.8 f = 1 MHz 1.6 IE = 0 A 1.4 T = 25C A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 15 30 35 20 25 V , REVERSE VOLTAGE (V) R Figure 4. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T R I , REVERSE CURRENT ( A)