BAV99L, SBAV99L Dual Series Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and www.onsemi.com PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit CASE 318 SOT23 Reverse Voltage V 100 Vdc R STYLE 11 Forward Current I 215 mAdc F ANODE CATHODE Peak Forward Surge Current I 500 mAdc FM(surge) 1 2 Repetitive Peak Reverse Voltage V 100 V RRM 3 Average Rectified Forward Current (Note 1) I 715 mA F(AV) CATHODE/ANODE (averaged over any 20 ms period) Repetitive Peak Forward Current I 450 mA FRM MARKING DIAGRAM NonRepetitive Peak Forward Current I A FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 A7 M t = 1.0 s 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage 1 the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A7 = Device Code M = Date Code* THERMAL CHARACTERISTICS = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation P 225 mW D *Date Code orientation and/or overbar may FR5 Board (Note 1) T = 25C A Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA ORDERING INFORMATION Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) Device Package Shipping T = 25C A BAV99LT1G SOT23 3,000 / Tape & Reel Derate above 25C 2.4 mW/C (PbFree) Thermal Resistance, JunctiontoAmbient R 417 C/W JA SBAV99LT1G SOT23 3,000 / Tape & Reel Junction and Storage T , T 65 to C J stg (PbFree) Temperature Range +150 BAV99LT3G SOT23 10,000 / Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. (PbFree) 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SBAV99LT3G SOT23 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 12 BAV99LT1/DBAV99L, SBAV99L OFF CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage, V Vdc (BR) (I = 100 A) 100 (BR) Reverse Voltage Leakage Current, I Adc R (V = 100 Vdc) 1.0 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance, C pF D (V = 0, f = 1.0 MHz) 1.5 R Forward Voltage, V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time, t ns rr (I = I = 10 mAdc, i = 1.0 mAdc) R = 100 6.0 F R R(REC) L Forward Recovery Voltage, V V FR (I = 10 mA, t = 20 ns) 1.75 F r CURVES APPLICABLE TO EACH DIODE 100 1000 T = 150C A 10 100 T = 150C T = 125C A A T = 125C A 1.0 T = 85C A T = 85C A 10 T = 55C T = 55C 0.1 A A T = 25C A 1 0.01 T = 40C T = 25C A A T = 55C A 0.1 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1020304050 60 70 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 0.61 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 012345678 V , REVERSE VOLTAGE (V) R Figure 3. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) d I , REVERSE CURRENT ( A) R