Switching Diode, Dual, Common Anode, 70 V BAW56WT1G, SBAW56WT1G Features wwwwww..onsemi.comonsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SC70 CASE 419 STYLE 4 MAXIMUM RATINGS (T = 25C) A CATHODE 1 ANODE Rating Symbol Max Unit 3 Reverse Voltage V 70 V R 2 Forward Current I 200 mA CATHODE F Peak Forward Surge Current I 500 mA FM(surge) MARKING DIAGRAM Forward Surge Max Current I A FSM (Single Square Wave) 1 s 4 1 ms 1 1 s 0.5 A1 M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not 1 be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C) A A1 = Device Code M = Date Code* Characteristic Symbol Max Unit = PbFree Package Total Device Dissipation FR5 Board P 200 mW D (Note: Microdot may be in either location) (Note 1) T = 25C A *Date Code orientation may vary depending Derate above 25C 1.6 mW/C upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 625 C/W JA ORDERING INFORMATION Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A Device Package Shipping Derate above 25C 2.4 mW/C BAW56WT1G SC70 3,000 / Tape & Reel Thermal Resistance, JunctiontoAmbient R 417 C/W JA (PbFree) Junction and Storage Temperature T , T 55 to C J stg SBAW56WT1G SC70 3,000 / Tape & Reel +150 (PbFree) 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 Publication Order Number: 1 June, 2020 Rev. 9 BAW56WT1/DBAW56WT1G, SBAW56WT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V V (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I A R (V = 25 V, T = 150C) 30 R J (V = 70 V) 2.5 R (V = 70 V, T = 150C) 50 R J Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mA, R = 100 , I = 1.0 mA) (Figure 1) 6.0 F R L R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% DUT i = 1.0 mA R(REC) 50 INPUT 50 OUTPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2