X-On Electronics has gained recognition as a prominent supplier of SBC807-40WT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SBC807-40WT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SBC807-40WT1G ON Semiconductor

SBC807-40WT1G electronic component of ON Semiconductor
SBC807-40WT1G ON Semiconductor
SBC807-40WT1G Bipolar Transistors - BJT
SBC807-40WT1G  Semiconductors

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See Product Specifications
Part No. SBC807-40WT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS GP XSTR PNP 45V
Datasheet: SBC807-40WT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2425 ea
Line Total: USD 0.24 
Availability - 8159
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28409
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 453
Multiples : 1
453 : USD 0.1435
461 : USD 0.141
469 : USD 0.1385
478 : USD 0.136
487 : USD 0.1334
500 : USD 0.1309
1000 : USD 0.1283
3000 : USD 0.1258
6000 : USD 0.1186
15000 : USD 0.1161

13579
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 543
Multiples : 1
543 : USD 0.1196
828 : USD 0.0785
1553 : USD 0.0418

8159
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.2425
10 : USD 0.16
100 : USD 0.0804
1000 : USD 0.0671
3000 : USD 0.0506
9000 : USD 0.044
24000 : USD 0.0407
45000 : USD 0.0396
99000 : USD 0.0385

1405
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.35
50 : USD 0.1638
100 : USD 0.133
245 : USD 0.07
673 : USD 0.0672

28409
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 478
Multiples : 1
478 : USD 0.136
487 : USD 0.1334
500 : USD 0.1309
1000 : USD 0.1283
3000 : USD 0.1258
6000 : USD 0.1186
15000 : USD 0.1161

13579
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1553
Multiples : 1
1553 : USD 0.0418

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SBC807-40WT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBC807-40WT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807-25W, BC807-40W General Purpose Transistors PNP Silicon BC80725W, BC80740W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C CollectorEmitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C EmitterBase Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80725, SBC80725 160 400 C CE BC80740, SBC80740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE CollectorEmitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80725WT1G 3000 / Tape & Reel SC70 SBC80725T1G* 5B (PbFree) BC80725WT3G 10,000 / Tape & Reel BC80740WT1G 3000 / Tape & Reel SC70 SBC80740WT1G* 5C (PbFree) BC80740WT3G 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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