BAV70L, SBAV70L Dual Switching Diode Common Cathode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and www.onsemi.com PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) SOT23 (TO236) Rating Symbol Value Unit CASE 318 Reverse Voltage V 100 V R STYLE 9 Forward Current I 200 mA F ANODE Repetitive Peak Forward Current I 1.5 A FRM 1 (Pulse Wave = 1 sec, Duty Cycle = 66%) 3 2 CATHODE NonRepetitive Peak Forward Current I A FSM ANODE (Square Wave, T = 25C prior to surge) J t = 1 s 31 t = 10 s 16 MARKING DIAGRAM t = 100 s 10 4.5 t = 1 ms 2.5 t = 10 ms A4 M 1.0 t = 100 ms 0.5 t = 1 s 1 THERMAL CHARACTERISTICS A4 = Device Code Characteristic Symbol Max Unit M = Date Code* Total Device Dissipation FR5 Board P 225 mW D = PbFree Package (Note 1) (Note: Microdot may be in either location) T = 25C A 1.8 mW/C *Date Code orientation and/or overbar may Derate above 25C vary depending upon manufacturing location. Thermal Resistance, 556 C/W R JA JunctiontoAmbient ORDERING INFORMATION Total Device Dissipation P 300 mW D Device Package Shipping Alumina Substrate, (Note 2) T = 25C A BAV70LT1G SOT23 3,000 / Tape & Reel 2.4 mW/C Derate above 25C (PbFree) Thermal Resistance, R 417 C/W JA SBAV70LT1G SOT23 3,000 / Tape & Reel JunctiontoAmbient (PbFree) Junction and Storage Temperature T , T 55 to C BAV70LT3G SOT23 10,000 / Tape & Reel J stg +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the SBAV70LT3G SOT23 10,000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. FR5 = 1.0 0.75 0.062 in. including part orientation and tape sizes, please 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: September, 2018 Rev. 13 BAV70LT1/DBAV70L, SBAV70L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR) (I = 100 A) 100 (BR) Reverse Voltage Leakage Current (Note 3) I A R (V = 25 V, T = 150C) 60 R J (V = 100 V) 1.0 R (V = 70 V, T = 150C) 100 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 1.5 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time R = 100 t ns L rr (I = I = 10 mA, I = 1.0 mA) (Figure 1) 6.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while second diode is unbiased. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2