BCW72LT1G, SBCW72LT1G General Purpose Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) CASE 31808 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit CollectorEmitter Voltage V 45 Vdc CEO COLLECTOR CollectorBase Voltage V 50 Vdc 3 CBO EmitterBase Voltage V 5.0 Vdc EBO 1 Collector Current Continuous I 100 mAdc C BASE THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit EMITTER Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation P D Alumina Substrate, (Note 2) T = 25C 300 mW A K2 M Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA 1 Junction and Storage Temperature T , T 55 to +150 C J stg K2 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. (Note: Microdot may be in either location) 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW72LT1G SOT23 3,000 / Tape & Reel (PbFree) SBCW72LT1G SOT23 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 5 BCW72LT1/DBCW72LT1G, SBCW72LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mAdc, V = 0) 45 C EB CollectorEmitter Breakdown Voltage V Vdc (BR)CES (I = 2.0 mAdc, V = 0) 45 C EB CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 50 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector Cutoff Current I CBO (V = 20 Vdc, I = 0) 100 nAdc CB E (V = 20 Vdc, I = 0, T = 100C) 10 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mAdc, V = 5.0 Vdc) 200 450 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.25 C B (I = 50 mAdc, I = 2.5 mAdc) 0.21 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 2.5 mAdc) 0.85 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.6 0.75 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (I = 0, V = 10 Vdc, f = 1.0 MHz) 4.0 E CB Input Capacitance C pF ibo (I = 0, V = 10 Vdc, f = 1.0 MHz) 9.0 E CB Noise Figure NF dB (I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V + 3.0 V t 10 < t < 500 s 1 1 300 ns +10.9 V 275 275 +10.9 V DUTY CYCLE = 2% DUTY CYCLE = 2% 10 k 10 k 0 - 0.5 V <1.0 ns C < 4.0 pF* C < 4.0 pF* S S - 9.1 V 1N916 < 1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. TurnOn Time Figure 2. TurnOff Time www.onsemi.com 2