SBE807-TL-E ON Semiconductor

Ordering number : ENA1055B SBE807 Schottky Barrier Diode SBE807 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =0.2mA 30 V R R V 1 I =0.7A 0.45 0.50 V F F Forward Voltage V 2 I =1.0A 0.48 0.53 V F F Reverse Current I V =16V 15 A R R Interterminal Capacitance C V =10V, f=1MHz 27 pF R Reverse Recovery Time t I =I =100mA, See specified Test Circuit. 10 ns rr F R 2 Thermal Resistance Rth(j-a) When mounted on ceramic substrate (900mm 0.8mm) 111 C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t Test Circuit rr Duty 10% 50 100 10 10s --5V t rr Ordering Information Device Package Shipping memo SBE807-TL-E Pb-Free CPH5 3,000pcs./reel SBE807-TL-W Pb-Free and Halogen Free I -- V I -- V F F R R 10000 3 5 2 1000 5 1.0 100 7 5 5 10 3 5 2 1.0 5 0.1 0.1 7 5 5 0.01 5 3 2 0.001 5 0.01 0.0001 0 0.10.2 0.300.40.5 .6 0.7 05210 15 20 530 35 Forward Voltage, V -- V IT09553 Reverse Voltage, V -- V IT09554 F R P (AV) -- I Ta -- I F O O 0.8 150 Rectangular (1)Rectangular wave =60 wave (2)Rectangular wave =120 0.7 125 (3)Rectangular wave =180 360 (1) (2)(4)(3) (5) (4)Sine wave =180 0.6 Sine wave (5)DC 100 180 0.5 360 0.4 75 0.3 50 (1)Rectangular wave =60 (4) 0.2 (2)Rectangular wave =120 (1) (2) (3) (5) 25 (3)Rectangular wave =180 0.1 (4)Sine wave =180 (5)DC 0 0 0 0.200.41.6 0.81.0 1.2 .4 0 0.2 0.4 0.6 0.76 0.8 0.95 1.01.05 1.2 1.4 Average Output Current, I -- A IT13283 Average Output Current, I -- A IT13284 O O No. A1055-2/4 Ta=125 C 100 C 75C 50C 25C 0C --25 C Ta=125 C 100C 75C 50 C 25 C 0 C --25C Average Forward Power Dissipation, P (AV) -- W Forward Current, I -- A F F 100mA 100mA 10mA Ambient Temperature, Ta -- C Reverse Current, I -- A R