MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive and Other Applications Requiring Unique EMITTER Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS SC70 (SOT323) CASE 419 Compliant 1 STYLE 3 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V Vdc CEO MMBT3904WT1, SMMBT3904WT1 40 MMBT3906WT1, SMMBT3906WT1 40 xx M CollectorBase Voltage V Vdc CBO MMBT3904WT1, SMMBT3904WT1 60 MMBT3906WT1, SMMBT3906WT1 40 1 xx = AM for MMBT3904WT1, EmitterBase Voltage V Vdc EBO MMBT3904WT1, SMMBT3904WT1 6.0 SMMBT3904WT MMBT3906WT1, SMMBT3906WT1 5.0 = 2A for MMBT3906WT1, SMMBT3906WT1 Collector Current Continuous I mAdc C M = Date Code* MMBT3904WT1, SMMBT3904WT1 200 = PbFree Package MMBT3906WT1, SMMBT3906WT1 200 (Note: Microdot may be in either location) THERMAL CHARACTERISTICS *Date Code orientation may vary depending up- Characteristic Symbol Max Unit on manufacturing location. Total Device Dissipation (Note 1) P 150 mW D T = 25C A ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient R 833 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C J stg MMBT3904WT1G, SC70/ 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBT3904WT1G SOT323 Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT3906WT1G, SC70/ 3000 / Tape & recommended footprint. SMMBT3906WT1G SOT323 Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2015 Rev. 9 MMBT3904WT1/DMMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT3904WT1, SMMBT3904WT1 40 C B (I = 1.0 mAdc, I = 0) MMBT3906WT1, SMMBT3906WT1 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) MMBT3904WT1, SMMBT3904WT1 60 C E (I = 10 Adc, I = 0) MMBT3906WT1, SMMBT3906WT1 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 6.0 (I = 10 Adc, I = 0) MMBT3904WT1, SMMBT3904WT1 E C 5.0 (I = 10 Adc, I = 0) MMBT3906WT1, SMMBT3906WT1 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE (I = 0.1 mAdc, V = 1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B (I = 10 mAdc, I = 1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B (I = 10 mAdc, I = 1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2