MMSD4148, SMMSD4148 Switching Diode Features SOD123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOD123 CASE 425 MAXIMUM RATINGS STYLE 1 Rating Symbol Value Unit Continuous Reverse Voltage V 100 V R 1 2 Forward Current I 200 mA F CATHODE ANODE Forward Surge Current t < 1 sec I 1.0 A FSM (Note 1) t = 1 sec 2.0 MARKING DIAGRAM Repetitive Peak Forward Current I 0.5 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) Operating and Storage Junction Temperature T , T 55 to C 5I M J stg 1 Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 5I = Device Code assumed, damage may occur and reliability may be affected. M = Date Code 1. Typical Values = PbFree Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Total Device Dissipation FR5 Board (Note 2) P 425 mW D T = 25C A Device Package Shipping Derate above 25C 3.4 mW/C MMSD4148T1G SOD123 3,000 / Thermal Resistance JunctiontoAmbient R 290 C/W (PbFree) Tape & Reel JA z 2. FR5 = 1.0 oz Cu, 1.0 in pad SMMSD4148T1G* SOD123 3,000 / (PbFree) Tape & Reel MMSD4148T3G SOD123 10,000 / (PbFree) Tape & Reel SMMSD4148T3G* SOD123 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 13 MMSD4148T1/DMMSD4148, SMMSD4148 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V V (BR) (I = 100 A) 100 BR Reverse Voltage Leakage Current I R (V = 20 V) 25 nA R (V = 75 V) 5.0 A R Forward Voltage V mV F (I = 10 mA) 1000 F Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 4.0 R Reverse Recovery Time t ns rr (I = I = 10 mA) (Figure 1) 4.0 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H t t 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2