DATA SHEET www.onsemi.com ESD Protection Diode Array, TSOP6 FIVE SURGE PROTECTION 5-Line 350 W PEAK POWER SMS05C, SMS12C, SMS15C, PIN ASSIGNMENT SMS24C 1 6 This 5line surge protection array is designed for application 2 5 requiring transient voltage protection capability. It is intended for use 6 in overtransient voltage and ESD sensitive equipment such as 1 3 4 computers, printers, automotive electronics, networking TSOP6 communication and other applications. This device features a CASE 318G PIN 1. CATHODE monolithic common anode design which protects five independent 2. ANODE SCALE 2:1 lines in a single TSOP6 package. 3. CATHODE 4. CATHODE 5. CATHODE Features 6. CATHODE Protects up to 5 Lines in a Single TSOP6 Package Peak Power Dissipation 350 W (8 20 s Waveform) MARKING DIAGRAM ESD Rating of Class 3B (Exceeding 8.0 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model Compliance with IEC 6100042 (ESD) 15 kV (Air), 8.0 kV 6x M (Contact) Flammability Rating of UL 94 V0 SZ Prefix for Automotive and Other Applications Requiring Unique x = SMS05C:J Site and Control Change Requirements AECQ101 Qualified and = SMS12C:K = SMS15C:L PPAP Capable = SMS24C:M These are PbFree Devices M = Date Code = PbFree Package Applications (Note: Microdot may be in either location) HandHeld Portable Applications Networking and Telecom Automotive Electronics ORDERING INFORMATION Serial and Parallel Ports Device Package Shipping Notebooks, Desktops, Servers SMS05CT1G SMS12CT1G TSOP6 MAXIMUM RATINGS (T = 25C unless otherwise specified) J 3000 / Tape & Reel (PbFree) SMS15CT1G Symbol Rating Value Unit SMS24CT1G P 1 Peak Power Dissipation 350 W PK SZSMS24CT1G 8 20 s Double Exponential Waveform (Note 1) For information on tape and reel specifications, including part orientation and tape sizes, please T Operating Junction Temperature Range 40 to 150 C J refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. T Storage Temperature Range 55 to 150 C STG T Lead Solder Temperature (10 s) 260 C L ESD Human Body Model ( HBM) >8000 V Machine Model (MM) >400 IEC 6100042 Air (ESD) >15000 IEC 6100042 Contact (ESD) >8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 3. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2021 Rev. 9 SMS05C/DSMS05C, SMS12C, SMS15C, SMS24C SMS05C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I = 1.0 mA (Note 3) 6.2 7.2 V BR T Reverse Leakage Current I V = 5.0 V 5.0 A R RWM Clamping Voltage V I = 5.0 A (8 20 s Waveform) 9.8 V C PP Clamping Voltage V I = 24 A (8 20 s Waveform) 14.5 V C PP Maximum Peak Pulse Current I 8 20 s Waveform 24 A PP Capacitance C V = 0 V, f = 1.0 MHz (Line to GND) 260 400 pF J R SMS12C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 12 V RWM Breakdown Voltage V I = 1.0 mA (Note 3) 13.3 15 V BR T Reverse Leakage Current I V = 12 V 0.001 1.0 A R RWM Clamping Voltage V I = 5.0 A (8 20 s Waveform) 19 V C PP Clamping Voltage V I = 15 A (8 20 s Waveform) 23 V C PP Maximum Peak Pulse Current I 8 20 s Waveform 15 A PP Capacitance C V = 0 V, f = 1.0 MHz (Line to GND) 120 150 pF J R SMS15C ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) (See Note 4) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 15 V RWM Breakdown Voltage V I = 1.0 mA (Note 3) 17 19 V BR T Reverse Leakage Current I V = 15 V 0.05 1.0 A R RWM Clamping Voltage V I = 5.0 A (8 20 s Waveform) 24 V C PP Clamping Voltage V I = 12 A (8 20 s Waveform) 29 V C PP Maximum Peak Pulse Current I 8 20 s Waveform 12 A PP Capacitance C V = 0 V, f = 1.0 MHz (Line to GND) 95 125 pF J R SZ/SMS24C ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 24 V RWM Breakdown Voltage V I = 1.0 mA (Note 3) 26.7 32 V BR T Reverse Leakage Current I V = 24 V 0.001 1.0 A R RWM Clamping Voltage V I = 5.0 A (8 20 s Waveform) 40 V C PP Clamping Voltage V I = 8 A (8 20 s Waveform) 44 V C PP Maximum Peak Pulse Current I 8 20 s Waveform 8.0 A PP Capacitance C V = 0 V, f = 1.0 MHz (Line to GND) 60 75 pF J R 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Parametrics are the same for the PbFree packages, which are suffixed with a G. www.onsemi.com 2