X-On Electronics has gained recognition as a prominent supplier of SMSD602-RT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMSD602-RT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMSD602-RT1G ON Semiconductor

SMSD602-RT1G electronic component of ON Semiconductor
SMSD602-RT1G ON Semiconductor
SMSD602-RT1G Bipolar Transistors - BJT
SMSD602-RT1G  Semiconductors

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See Product Specifications
Part No. SMSD602-RT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC59 GP XSTR NPN 25V
Datasheet: SMSD602-RT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2963 ea
Line Total: USD 0.3 
Availability - 8782
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8782
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.2963
10 : USD 0.19
100 : USD 0.0864
1000 : USD 0.0715
3000 : USD 0.0572
9000 : USD 0.0506
24000 : USD 0.0506
45000 : USD 0.0473

   
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RoHS - XON
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We are delighted to provide the SMSD602-RT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMSD602-RT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSD602-RT1G General Purpose NPN Amplifier Transistor Features MSD602RT1G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA, I = 0) 50 C B CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A, I = 0) 60 C E EmitterBase Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) 7.0 E C CollectorBase Cutoff Current I A CBO (V = 20 V, I = 0) 0.1 CB E DC Current Gain (Note 1) (V = 10 V, I = 150 mA) h 120 240 CE C FE1 (V = 10 V, I = 500 mA) h 40 CE C FE2 CollectorEmitter Saturation Voltage V V CE(sat) (I = 300 mA, I = 30 mA) 0.6 C B BaseEmitter On Voltage V V BE(on) (I = 300 mA, V = 5 V) 1.0 C CE BaseEmitter Saturation Voltage V V BE(sat) (I = 300 mA, I = 30 mA) 1.0 C B Output Capacitance C pF ob (V = 10 V, I = 0, f = 1.0 MHz) 15 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, D.C. 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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