ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. STK554U392A-E Intelligent Power Module (IPM) 600 V, 15 A Overview This Inverter IPM is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP www.onsemi.com module. Output stage uses IGBT / FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate PACKAGE PICTURE boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers. A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies Built-in dead-time for shoot-thru protection Having open emitter output for low side IGBTs individual shunt SIP29 56x21.8 resistor per phase for OCP Externally accessible embedded thermistor for substrate temperature measurement Shutdown function ITRIP to disable all operations of the 6 phase output stage by external input Certification UL1557 (File number : E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Ratings Unit V Supply voltage V+ to U-, V-, W-, surge < 500 V *1 450 V CC V Collector-emitter voltage V+ to U, V, W or U, V, W, to U-, V-, W- 600 V CE V+,U-,V-,W-,U,V,W terminal current 15 A Output current Io V+,U-,V-,W-,U,V,W terminal current, Tc = 100 C 8 A Output peak current Iop V+,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms 30 A Pre-driver voltage VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS *2 20 V 0.3 to V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 V DD 0.3 to V FLTEN terminal voltage VFLTEN FLTEN terminal V DD Maximum power dissipation Pd IGBT per 1 channel 35 W Junction temperature Tj IGBT, FRD, Pre-Driver IC 150 C Storage temperature Tstg 40 to +125 C Operating case temperature Tc IPM case 40 to +100 C Tightening torque A screw part *3 0.9 Nm Withstand voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is V terminal voltage unless otherwise specified. SS *1 : Surge voltage developed by the switching operation due to the wiring inductance between + and U- (V-, W-) terminal. *2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V to V terminal voltage. DD SS *3 : Flatness of the heat-sink should be less than 50 m to +100 m. *4 : Test conditions : AC 2500 V, 1 second Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 15 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : December 2016 - Rev. 2 STK554U392C-E/D