Intelligent Power Module (IPM) 600 V, 30 A STK581U3C2D-E Overview This Inverter IPM is highly integrated device containing all High www.onsemi.com Voltage (HV) control from HVDC to 3phase outputs in a single SIP module (SingleIn line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and SIP22 70x31.1 Over Current Protection (OCP) with a Fault Detection output flag. CASE 127BU Internal Boost diodes are provided for high side gate boost drive. Features MARKING DIAGRAM Single Control Power Supply due to Internal Bootstrap Circuit for High Side Predriver Circuit All Control Input and Status Output are at Low Voltage Levels STK581U3C2D directly compatible with Microcontrollers ABCDD Builtin Cross Conduction Prevention Externally accessible Embedded Thermistor for Substrate Temperature Measurement STK581U3C2D = Specific Device Code The Level of the Overcurrent Protection Current is adjustable with A = Year B = Month the External Resistor, RSD C = Production Site These Devices are PbFree and are RoHS Compliant DD = Factory Lot code Device marking is on package underside Certification UL1557 (File number : E339285) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 2 STK581U3C2DE/DSTK581U3C2DE Specifications ABSOLUTE MAXIMUM RATINGS (at Tc = 25C) Parameter Symbol Conditions Ratings Unit Supply voltage V P to N, surge < 500 V (Note 1) 450 V CC Collectoremitter voltage V P to U,V,W or U,V,W to N 600 V CE Output current Io P, N, U,V,W terminal current 30 A P, N, U,V,W terminal current at Tc = 100C 15 A Output peak current Iop P, N, U,V,W terminal current for a Pulse width of 1 ms 45 A Predriver voltage VD1,2,3,4 VB1 to U, VB2 to V, VB3 to W, V to V (Note 2) 20 V DD SS Input signal voltage V HIN1, 2, 3, LIN1, 2, 3 0.3 to V V IN DD FAULT terminal voltage VFAULT FAULT terminal 0.3 to V V DD Maximum power dissipation Pd IGBT per channel 49 W Junction temperature Tj IGBT, FRD 150 C Storage temperature Tstg 40 to +125 C Operating case temperature Tc IPM case temperature 40 to +100 C Tightening torque Case mounting screws (Note 3) 1.17 Nm Withstand voltage Vis 50 Hz sine wave AC 1 minute (Note 4) 2000 VRMS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: Reference voltage is V terminal voltage unless otherwise specified. SS 1. Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal. 2. Terminal voltage : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V to V DD SS 3. Flatness of the heatsink should be 0.15 mm and below. 4. Test conditions : AC 2500 V, 1 s. ELECTRICAL CHARACTERISTICS (at Tc = 25 C, VD1, VD2, VD3, VD4 = 15 V, V = 300 V, L = 3.5 mH) CC Test Circuit Parameter Symbol Conditions Min Typ Max Unit Power Output Section Fig.1 Collectoremitter cutoff current I V = 600 V 0.1 mA CE CE Bootstrap diode reverse current IR(BD) VR(BD) 0.1 mA Collector to emitter V (SAT) Ic = 30 A Upper side Fig.2 1.8 2.7 V CE saturation voltage Tj = 25C Lower side 2.1 3.0 (Note 5) Ic = 15 A Upper side 1.5 Tj = 100C Lower side 1.7 (Note 5) Diode forward voltage VF IF = 30 A Upper side Fig.3 2.0 2.9 V Tj = 25C Lower side 2.3 3.2 (Note 5) IF = 15 A Upper side 1.5 Tj = 100C Lower side 1.7 (Note 5) Junction to case jc(T) IGBT 2.5 C/W thermal resistance jc(D) FRD 3 Control (Predriver) Section Predriver power dissipation ID VD1, 2, 3 = 15 V Fig.4 0.08 0.4 mA VD4 = 15 V 1.6 4 www.onsemi.com 2