STK5F1U3E3D-E Inverter Power IPM www.onsemi.com for 3-phase Motor Drive Overview This Inverter Power IPM is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Built-in cross conduction prevention Externally accessible embedded thermistor for substrate temperature measurement The level of the over-current protection current is adjustable with the external resistor, RSD Low switching noise by optimized the gate resistor Certification UL1557 (File Number: E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Ratings Unit Supply voltage V P to N, surge < 500V *1 450 V CC Collector-emitter voltage V P to U,V,W or U,V,W to N 600 V CE P, N, U, V, W terminal current 50 Output current Io A P, N, U, V, W terminal current, Tc=100 C 25 Output peak current Iop P, N, U, V, W terminal current, PW=1ms 76 A Pre-driver supply voltage VD1,2,3,4 VB1 to VS1,VB2 to VS2,VB3 to VS3,V to V *2 20 V DD SS Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 0.3 to V V DD FAULT terminal voltage VFAULT FAULT terminal 0.3 to V V DD Maximum loss Pd IGBT per channel 67.5 W Junction temperature Tj IGBT,FRD 150 C Storage temperature Tstg 40 to +125 C Operating temperature Tc IPM case 20 to +100 C Tightening torque MT A screw part at use M4 type screw *3 1.17 Nm Withstand voltage Vis 50Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is N terminal = V terminal voltage unless otherwise specified. SS *1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2: Terminal voltage: VD1=VB1VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=V V . DD SS *3: Flatness of the heat-sink should be 0.25mm and below. *4: Test conditions: AC 2500V, 1 second. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 1 STK5F1U3E3D-E/D STK5F1U3E3D-E Electrical Characteristics at Tc 25 C, VD1, VD2, VD3, VD4=15V Ratings Test Parameter Symbol Conditions Unit circuit Min. Typ. Max. Power output section Collector to emitter cut-off current I V =600V - - 100 A CE CE Fig.1 Bootstrap diode reverse current IR(BD) VR(BD)=600V - - 100 A Upper side - 1.7 2.6 Ic=50A Collector to emitter saturation Lower side*1 - 2.3 3.2 V (sat) Fig.2 V CE voltage Upper side - 1.35 - Ic=25A, Tj=100 C Lower side*1 - 1.75 - Upper side - 1.8 2.7 IF=50A Lower side*1 - 2.4 3.3 Diode forward voltage VF Fig.3 V IF=25A, Upper side - 1.45 - Tj=100 C Lower side*1 - 1.85 - j-c(T) IGBT - - 1.5 - C/W Junction to case thermal resistance j-c(D) FWD - - 1.8 - C/W Control (Pre-driver) section Pre-drive power supply consumption VD1, 2, 3=15V - 0.05 0.4 ID Fig.4 mA current VD4=15V - 1.0 4.0 High level input voltage Vin H HIN1, HIN2, HIN3, - 2.5 - - V LIN1, LIN2, LIN3 to V Low level input voltage Vin L - - - 0.8 V SS Logic 1 input leakage current I VIN=+3.3V - - 100 195 A IN+ Logic 0 input leakage current I VIN=0V - - - 1 A IN- RBoot 39 Bootstrap limiting resistor - - - Rb 1 - - - Gate resistor Rg 36 - - - Protection section Over-current protection current ISD PW=100 s,RSD=0 Fig.5 57 - 76 A Over-current protection 2.0 ISDNF - - - us noise filter time constant V and V supply undervoltage V dd Bx ddUV+ - 10.6 11.1 11.6 V positive going input threshold V BxUV+ V and V supply undervoltage V dd Bx ddUV- - 10.4 10.9 11.4 V negative going input threshold V BxUV- V and V supply undervoltage V dd Bx ddUVH - - 0.2 - V I hysteresis V lockout BxUVH FAULT terminal sink current IOSD VFAULT=0.1V - 1 1.5 - mA FAULT clearance delay time FLTCLR From time fault condition clear - 1.3 1.65 2.5 ms Switching character tON - 0.7 1.5 s Switching time Io=50A, Inductive load tOFF - 1.1 2.1 s 1870 Turn-on switching loss Eon - - J Io=50A, V =300V, CC 1870 Turn-off switching loss Eoff - - J VD=15V, L=280 H Fig.6 3740 Total switching loss Etot - - J 1075 Turn-on switching loss Eon - - J Io=25A,V =300V, CC VD=15V, L=280 H, 1300 Turn-off switching loss Eoff - - J Tc=100 C 2375 Total switching loss Etot - - J Io=25A, V =300V, CC 135 Diode reverse recovery energy Erec - - J VD=15V, L=280 H, - 135 Diode reverse recovery time trr - - ns Tc=100 C Io = 76A, V =450V Reverse bias safe operating area RBSOA CE - Full square - V =400V, Tc=100 C Short circuit safe operating area SCSOA CE - 4 - - s Current output signal level ISO Io=50A - 0.427 0.45 0.474 V Reference voltage is V terminal voltage unless otherwise specified. SS *1: The lower sides V (sat) and VF include a loss by the shunt resistance. CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2