STK5F4U3E2D-E Intelligent Power Module (IPM) 600 V, 50 A Overview This Inverter Power IPM is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module www.onsemi.com (Dual-In line Package). Output stage uses IGBT / FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers. A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies Built-in dead-time for shoot-thru protection Having open emitter output for low side IGBTs individual shunt resistor per phase for OCP Externally accessible embedded thermistor for substrate temperature measurement Shutdown function ITRIP to disable all operations of the 6 phase output stage by external input Certification UL1557 (File number : E339285) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Remarks Ratings Unit V Supply voltage P to NU,NV,NW, surge < 500 V *1 450 V CC V Collector-emitter voltage P to U, V, W, U to NU, V to NV, or W to NW 600 V CE P, N, U, V, W terminal current 50 Output current Io A P, N, U, V, W terminal current, Tc = 100 C 25 Output peak current Iop P, N, U, V, W terminal current, PW = 1 ms 100 A VB1 to VS1, VB2 to VS2, VB3 to VS3, V to V *2 Pre-driver supply voltage VD1, 2, 3, 4 20 V DD SS Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3, terminal 0.3 to VDD V FAULT terminal voltage VFAULT FAULT terminal V 0.3 to VDD Maximum loss Pd IGBT per channel 62.5 W Junction temperature Tj IGBT, FRD 150 C Storage temperature Tstg 40 to +125 C Operating temperature Tc IPM case 20 to +100 C Tightening torque MT A screw part at use M4 type screw *3 1.17 Nm Withstand Voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is V terminal voltage unless otherwise specified. SS *1 : Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2 : Terminal voltage : VD1 = VB1 to VS1, VD2 = VB2 to VS2, VD3 = VB3 to VS3, VD4 = V to V . DD SS *3 : Flatness of the heat-sink should be 0.25 mm and below. *4 . Test conditions : AC 2500 V, 1 s. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : October 2016 - Rev. 1 STK5F4U3E2D-E/D STK5F4U3E2D-E Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V Ratings Test Parameters Symbols Conditions Unit Circuit Min. Typ. Max. Power output section I V = 600 V Collector-to-emitter cut-off current Fig.1 - - 1.0 mA CE CE Boot-strap diode reverse current IR(BD) VR(BD) = 600 V - - - 0.5 mA Io = 50 A, Tj = 25C - 1.7 2.6 V (sat) Collector-to-emitter saturation voltage Fig.2 V CE Io = 25 A, Tj = 100C - 2.3 - Io = 50 A, Tj = 25C - 1.8 2.7 Diode forward voltage VF Fig.3 V - 2.5 - Io = 25 A, Tj = 100C j-c(T) IGBT - - 1.5 - C/W Junction to case thermal resistance j-c(D) FWD - - 1.8 - C/W Control (Pre-driver) section VD1, 2, 3 = 15 V - 0.05 0.4 Pre-drive power supply consumption ID Fig.4 mA current VD4 = 15 V - 1.0 4.0 High level input voltage Vin H - 2.5 - - V HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 Low level input voltage Vin L - - - 0.8 V Protection section ITRIP(17) to V (19) ITRIP threshold voltage VITRIP Fig.5 0.44 0.49 0.54 V SS Pre-drive low voltage protection UVLO - 10 - 12 V FAULT terminal input electric current IOSD VFAULT = 0.1 V - - 1.5 - mA From time fault condition FAULT clearance delay time FLTCLR - 1.0 - 3.0 ms clear Thermistor for substrate temperature Resistance between the Rt - 90 - 110 k monitor TH1 and TH2 terminals Switching character tON - 0.7 1.5 s Switching time Io = 50 A, Inductive load tOFF - 1.1 2.1 s Turn-on switching loss Eon - 1100 - J Io = 50 A, V = 300 V, CC Turn-off switching loss Eoff - 1200 - J Fig.6 VD = 15 V, L = 280 H Total switching loss Etot - 2300 - J Turn-on switching loss Eon - 1200 - J Io = 50 A, V = 300 V, CC Turn-off switching loss Eoff VD = 15 V, L = 280 H, - 1350 - J Tc = 100C Total switching loss Etot - 2550 - J Io = 50 A, V = 300 V, CC Diode reverse recovery energy Erec - 52.5 - J VD = 15 V, L = 280 H, Diode reverse recovery time Trr - 104 - ns Tc = 100C Reference Voltage is V terminal voltage unless otherwise specified. SS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2