STK5F1U3E2D-E Advance Information Intelligent Power Module (IPM) 600 V, 50 A Overview This Inverter Power IPM is highly integrated device containing all High www.onsemi.com Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT / FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Cross conduction prevention Externally accessible embedded thermistor for substrate temperature measurement The level of the over-current protection current is adjustable with the external resistor, RSD Certification UL1557 (File Number : E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Ratings Unit V Supply voltage P to N, surge < 500 V *1 450 V CC V Collector-emitter voltage P to U, V, W or U, V, W to N 600 V CE P, N, U, V, W terminal current 50 Output current Io A P, N, U, V, W terminal current, Tc = 100 C 25 Output peak current Iop P, N, U, V, W terminal current, PW = 1 ms 76 A VB1 to VS1, VB2 to VS2, VB3 to VS3, V to V *2 Pre-driver supply voltage VD1, 2, 3, 4 DD SS 20 V 0.3 to V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 V DD 0.3 to V FAULT terminal voltage VFAULT FAULT terminal V DD Maximum loss Pd IGBT per channel 67.5 W Junction temperature Tj IGBT,FRD 150 C Storage temperature Tstg 40 to +125 C Operating temperature Tc IPM case 20 to +100 C Tightening torque MT A screw part at use M4 type screw *3 1.17 Nm Withstand voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is N terminal = V terminal voltage unless otherwise specified. SS *1 : Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2 : Terminal voltage : VD1 = VB1 to VS1, VD2 = VB2 to VS2, VD3 = VB3 to VS3, VD4 = V to V . DD SS *3 : Flatness of the heat-sink should be 0.25 mm and below. *4 : Test conditions : AC 2500 V, 1 s. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : October 2016 - Rev. P2 STK5F1U3E2D-E/D STK5F1U3E2D-E Electrical Characteristics at Tc 25 C, VD1, VD2, VD3, VD4 = 15 V Ratings Test Parameter Symbol Conditions Unit circuit Min. Typ. Max. Power output section I V = 600 V Collector to emitter cut-off current - - 100 A CE CE Fig.1 Bootstrap diode reverse current IR(BD) VR(BD) = 600 V - - 100 A Upper side - 1.7 2.6 Ic = 50 A Lower side - 2.3 3.2 Collector to emitter saturation V (sat) Fig.2 V CE voltage Upper side - 1.35 - Ic = 25 A, Tj = 100C Lower side - 1.75 - Upper side - 1.8 2.7 IF = 50 A Lower side - 2.4 3.3 Diode forward voltage VF Fig.3 V Upper side - 1.45 - IF = 25 A, Tj = 100C Lower side - 1.85 - j-c(T) IGBT - - 1.5 - C/W Junction to case thermal resistance j-c(D) FWD - - 1.8 - C/W Control (Pre-driver) section VD1, 2, 3 = 15 V - 0.05 0.4 Pre-drive power supply consumption ID Fig.4 mA current VD4 = 15 V - 1.0 4.0 High level input voltage Vin H - 2.5 - - V HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 to V Low level input voltage Vin L - - - 0.8 V SS Logic 1 input leakage current I VIN = +3.3 V 100 195 A IN+ Logic 0 input leakage current I VIN = 0 V 1 A IN- Protection section Over-current protection electric ISD PW = 100 s, RSD = 0 Fig.5 57 - 76 A current V and V supply undervoltage V DD Bx ddUV+ 10.6 11.1 11.6 V V positive going input threshold BxUV+ V and V supply undervoltage V DD Bx ddUV- 10.4 10.9 11.4 V V negative going input threshold BxUV- V and V supply undervoltage V DD Bx ddUVH 0.2 V V I hysteresis BxUVH lockout FAULT terminal input electric current IOSD VFAULT = 0.1 V - 1 1.5 - mA FAULT clearance delay time FLTCLR From time fault condition clear - 18 - 80 ms Resistance between the TH(18) Thermistor for substrate temperature Rt - 90 - 110 k and V (20) terminals monitor SS Switching character tON - 0.7 1.5 s Switching time Io = 50 A, Inductive load tOFF - 1.1 2.1 s Turn-on switching loss Eon - 1100 - J Io = 50 A, V = 300 V, CC Turn-off switching loss Eoff Fig.6 - 1220 - J VD = 15 V, L = 280 H Total switching loss Etot - 2320 - J Turn-on switching loss Eon Io = 25 A, V = 300 V, - 620 - J CC Turn-off switching loss Eoff VD = 15 V, L = 280 H, - 790 - J Total switching loss Etot Tc = 100C - 1410 - J Diode reverse recovery energy Erec Io = 25 A, V = 300 V, - 27 - J CC VD = 15 V, L = 280 H, Diode reverse recovery time Trr - 80 - ns Tc = 100C Io = 76 A, V = 450 V Reverse bias safe operating area RBSOA Full square CE Short circuit safe operating area SCSOA V = 400 V, Tc = 100C 4 s CE Electric current output signal level ISO Io = 50 A - 0.427 0.45 0.474 V Reference voltage is N terminal = V terminal voltage unless otherwise specified. SS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2