CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A04SO has been designed to provide ESD protection for www.onsemi.com electronic components or subsystems requiring minimal capacitive loading. This device is ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series which steer the positive or negative ESD current pulse to either the positive (V ) or negative (V ) P N SC74 supply rail. A Zener diode is embedded between V and V , offering P N SO SUFFIX two advantages. First, it protects the V rail against ESD strikes, and CASE 318F CC second, it eliminates the need for a bypass capacitor that would otherwise be needed for absorbing positive ESD strikes to ground. MARKING DIAGRAM This device will protect against ESD pulses up to 8kV per the VP IEC 6100042 standard. CH1 CH2 CH3 CH4 This device is particularly well-suited for protecting systems using high-speed ports such as USB 2.0, IEEE1394 (Firewire , iLink ), Serial ATA, DVI, HDMI and corresponding ports in removable storage, digital camcorders, DVDRW drives and other applications where extremely low loading capacitance with ESD protection are VN required in a small package footprint. CM1213A04SO Features Four Channels of ESD Protection MARKING DIAGRAM Provides ESD Protection to IEC6100042 Level 4 8 kV Contact Discharge 234M Low Channel Input Capacitance of 0.85 pF Typical Minimal Capacitance Change with Temperature and Voltage 1 Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for 234 = Specific Device Code Differential Dignals M = Date Code Zener Diode Protects Supply Rail and Eliminates the Need for = PbFree Package External By-pass Capacitors (Note: Microdot may be in either location) Each I/O Pin Can Withstand Over 1000 ESD Strikes* SZ Prefix for Automotive and Other Applications Requiring Unique ORDERING INFORMATION Site and Control Change Requirements AECQ101 Qualified and Device Package Shipping PPAP Capable CM1213A04SO SC74 3,000 / These Devices are Pb-Free and RoHS Compliant (PbFree) Tape & Reel Applications SZCM1213A04SO SC74 3,000 / USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks and Peripherals (PbFree) Tape & Reel IEEE1394 Firewire Ports at 400 Mbps/800 Mbps For information on tape and reel specifications, DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification LCD Displays Brochure, BRD8011/D. Serial ATA Ports in Desktop PCs and Hard Disk Drives PCI Express Ports General Purpose HighSpeed Data Line ESD Protection *Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: February, 2018 Rev. 2 CM1213A04SO/D234 CM1213A04SO, SZCM1213A04SO PACKAGE/PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS Pin Name Type Description Top View 1 CH1 I/O ESD Channel CH1 1 6 CH4 2 V GND Negative Voltage Supply Rail N V 2 5 V N P 3 CH2 I/O ESD Channel 4 CH3 I/O ESD Channel CH2 34 CH3 5 V PWR Positive Voltage Supply Rail 6Lead SC74 P 6 CH4 I/O ESD Channel SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Supply Voltage (V V ) 6.0 V P N Operating Temperature Range 40 to +85 C Storage Temperature Range 65 to +150 C DC Voltage at any channel input (V 0.5) to (V + 0.5) V N P Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range 40 to +85 C Package Power Rating 225 mW Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units V Operating Supply Voltage (V V ) 3.3 5.5 V P P N I Operating Supply Current (V V ) = 3.3 V 8.0 A P P N V Diode Forward Voltage I = 8 mA T = 25C 0.90 V F F A I Channel Leakage Current T = 25C V = 5 V, V = 0 V 0.1 1.0 A LEAK A P N C Channel Input Capacitance At 1 MHz, V = 0 V (Note 2) 2.0 pF IN IN Channel I/O ti I/O Capacitance 1.5 pF C IO ESD ESD Protection T = 25C (Note 3) kV A IEC 6100042 Contact 8 IEC 6100042 Air 8 8 ISO 10605 330 pF/330 Contact V Channel Clamp Voltage T = 25C, I = 1A, t = 8/20 S V CL A PP P Positive Transients (Note 2) +9.9 Negative Transients 1.6 R Dynamic Resistance T = 25C, I = 1A, t = 8/20 S DYN A PP P Positive Transients 0.96 (Note 2) Negative Transients 0.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. All parameters specified at T = 40C to +85C unless otherwise noted. A 2. V = 3.3 V, V grounded. P N 3. These measurements performed with no external capacitor on V (V floating). P P www.onsemi.com 2