CM1214A 1 and 2-Channel AC Signal ESD Protector Product Description The CM1214A ESD protector is used to protect bipolar signal lines against electrostatic discharge (ESD). The CM1214A allows www.onsemi.com operation in highspeed environments with signals levels up to 5 V. The CM1214A comes in two versions: The CM1214A01SO is a single channel ESD protector and is SOT233 MSOP8 available in a 3lead SOT233 package. SO SUFFIX MR SUFFIX The CM1214A02MR is a dual channel ESD protector and is CASE 318 CASE 846AD available in an 8lead MSOP8 package. BLOCK DIAGRAM The low sub1 pF loading capacitance makes the CM1214A01SO CH1 CH1 CH3 ideal for protecting highspeed interfaces including RF switches and amplifiers. The CM1214A02MR is ideal for dual highspeed signal pairs used in Gigabit Ethernet, ADSL, etc. The CM1214A02MR can also be used for higher transmit voltage applications by connecting the two CH2 CH2 CH4 channels in series. CM1214A01SO CM1214A02MR Features Single Channel ESD Protection for an AC Signal Up To 5 V for MARKING DIAGRAMS 0.25 W Transmit Power F1S M Connects Two Channels in Series for Signals Up To 10 V (1 W transmit power) 1 8 kV ESD Protection Per IEC 6100042 Contact Discharge M = Date Code Sub1pF Loading Capacitance = PbFree Package (Note: Microdot may be in either location) Minimal Variation with Voltage and Temperature Each I/O Pin Can Withstand Over 1000 ESD Strikes* SOT233 and MSOP8 Packages RF2S These Devices are PbFree and are RoHS Compliant XXXXX YYWW Applications RF Switch and Amplifier Protection XXXXX = Last 5 Digits of Lot RF Modules and RF IC Protection YYWW = Date Code Wireless Handsets and WLAN ORDERING INFORMATION HighSpeed AC Signals for Gbit Ethernet, etc. Device Package Shipping CM1214A01SO SOT23 3000/Tape & Reel (PbFree) CM1214A02MR MSOP 4000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: October, 2016 Rev. 6 CM1214A/DRF2S F1S CM1214A PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS SOT233 Package Top View Pin Name Description CH1 1 1 CH1 ESD Channel 3 N.C. 2 CH2 ESD Channel 3 N.C. No connect CH2 2 SOT233 MSOP8 Package Pin Name Description Top View 1 CH1 ESD Channel CH1 1 8 N.C.* 2 N.C. No connect N.C.* 2 7 CH2 3 N.C. No connect N.C.* 3 6 CH4 4 CH3 ESD Channel 5 N.C. No connect CH3 4 5 N.C.* 6 CH4 ESD Channel MSOP8 7 CH2 ESD Channel * All N.C. pins must be left floating (i.e., not connected to 8 N.C. No connect the PCB). See applications section for more information. SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units DC Voltage between CH pins 7 V Operating Temperature Range 40 to +85 C Storage Temperature Range 65 to +150 C Package Power Rating mW SOT233 Package (CM1214A01SO) 225 MSOP8 Package (CM1214A02MR) 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range 40 to +85 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units V Standoff Voltage I = 10 A 7 V ST V ESD Voltage Protection (Notes 2 and 3) kV ESD Peak discharge voltage between CH pins a) Contact discharge per IEC 6100042 8 standard I Channel Leakage Current T = 25C, 5.5 V between CH pins 0.1 1.0 A LEAK A R Dynamic Resistance 1.36 T = 25C, I = 1 A, t = 8/20 S DYN A PP P Any I/O pin to Ground (Note 4) www.onsemi.com 2