TND321VD Excellent Power Device www.onsemi.com Dual inverter driver for general purpose Features Dual inverter Monolithic structure (High voltage CMOS process adopted) Withstand voltage of 25V is assured Wide range of operating voltage : 4.5V to 25V Peak output current : I +/I =0.8A /1A O O Fast switching time (30ns typical at 1000pF load) Fully compatible input to TTL / CMOS (V =up to 2.6V, at V =4.5 to 25V) IH DD Built-in input pull-down resistance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Supply Voltage V 0 to 25 V DD Input Voltage V GND--0.3 to V +0.3 V IN DD Allowable Power Dissipation P max 0.2 W D Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Packing Type : TL Pin Assignment TND321VD-TL-E 87 65 TND321VD-TL-H 1 : INA 2 : OUTA TL 3 : OUTB 4 : INB Marking 5 : GND 6 : VDD 12 34 7 : VDD Top View 8 : VDD DC LOT No. SOT-28FL / VEC8 ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 March 2015 - Rev. 1 TND321VD/DTND321VD Recommend Operating Conditions at Ta=25C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage V 4.5 to 25 V DD Operating Temperature Topr --40 to +125 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics (AC Characteristics) at Ta=25C, V =18V, V =5V DD IN Ratings Parameter Symbol Conditions Unit min typ max Turn-On Rise Time t C =1000pF 35 50 ns r L Turn-Off Fall Time t C =1000pF 30 45 ns f L t 1 C =1000pF 30 45 ns D L Delay Time t 2 C =1000pF 45 60 ns D L Electrical Characteristics (DC Characteristics) at Ta=25C, V =4.5 to 25V DD Ratings Parameter Symbol Conditions Unit min typ max Logic 1 Input Voltage V 2.6 V IH Logic 0 Input Voltage V 0.8 V IL Logic 1 Input Bias Current I + V =V =25V 40 100 mA IN IN DD Logic 0 Input Bias Current I -- V =0V --1 1 mA IN IN High-level Output Voltage V I =0A V --0.1 V OH O DD Low-level Output Voltage V I =0A 0.1 V OL O V =10V, V =3V, (both inputs) 1.0 4.5 mA DD IN V Supply Current Isupp DD V =10V, V =0V, (both inputs) 0.2 mA DD IN Output High Short Circuit Pulsed Current I + V =18V, PW 10ms, V =0V 0.8 A O DD OUT Output Low Short Circuit Pulsed Current I -- V =18V, PW 10ms, V =18V 1.0 A O DD OUT V =18V, Iload=10mA, V =H 11 16.5 DD OUT Output On Resistance ROUT V =18V, Iload=10mA, V =L 6 10 DD OUT Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2