TND507S-TL-E ON Semiconductor

Ordering number : EN8203A TND507S SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) Ballast, General Purpose Driver for Applications TND507S Including PDP Sustain Pulse Drive, DC / AC Motor Drive, Induction Heating, Battery Charger, High Frequency Switching Power Supply, and Switching Amplifiers Features Monolithic structure. Single input and two output. Allows simplified configuration of driver circuit. Withstand voltage of 600V is assured. Built-in shutdown protection function. Specifications Absolute Maximum Ratings at Ta=25C (All voltage parameters are absolute voltage referenced to GND) Parameter Symbol Conditions Ratings Unit High Side Floating Supply Absolute Voltage V --0.3 to 625 V H High Side Floating Supply Offset Voltage V V --25 to V +0.3 V HFG H H High Side Output Voltage V V --0.3 to V +0.3 V HOUT HFG H Low Side Fixed Supply Voltage V --0.3 to 25 V L Low Side Output Voltage V --0.3 to V +0.3 V LOUT L Logic Input Voltage V --0.3 to V +0.3 V IN L Allowable Power Dissipation P 0.3 W D Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706 MS IM TC-00000208 / 21505IP TS IM TB-00001105 No.8203-1/9TND507S Recommended Operating Conditions at Ta=25C Parameter Symbol Conditions Ratings Unit High Side Floating Supply Absolute Voltage V V +10 to V +20 V H HFG HFG High Side Floating Supply Offset Voltage V 0 to 600 V HFG High Side Output Voltage V V V V HOUT HFG to H Low Side Fixed Supply Voltage V 10 to 20 V L Low Side Output Voltage V 0 to V V LOUT L Logic Input Voltage V 0 to V V IN L Ambient Temperature Ta --40 to +125 C AC Characteristics at Ta=25C (V =V =15V, C =1000pF) L HHFG L Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t V =0 950 ns on HFG Turn-OFF Delay Time t V =600V 150 ns off HFG Turn-ON Rise Time t C =1000pF 120 ns r L Turn-OFF Fall Time t C =1000pF 60 ns f L Delay Matching MT Ht -Lt Ht -Lt 30 ns on on , off off Dead Time DT 800 ns DC Characteristics at Ta=25C (V =V =15V) L HHFG Ratings Parameter Symbol Conditions Unit min typ max V =10V 6.4 V L Logic 1 Input Voltage V V =15V 9.5 V IH L V =20V 12.8 V L V =10V 3.7 V L Logic 0 Input Voltage V V =15V 5.8 V IL L V =20V 7.7 V L High-level Output Voltage(V -V)V I =0 100 mV BIAS O OH O Low-level Output Voltage(V)V I =0 100 mV O OL O Offset Supply Leakage Current I V =V =600V 10 A LK H HFG Quiescent V Supply Current I V =0 or V 50 100 A H QH IN L Quiescent V Supply Current I V =0 or V 70 180 A L QL IN L Logic 1 Input Bias Current I+V =15V 20 40 A IN IN Logic 0 Input Bias Current I -- V =0 1 A IN IN V Supply Undervoltage H V + HUV 7.6 8.9 9.9 V Positive Going Threshold V Supply Undervoltage H V -- HUV 6.7 8.1 9.5 V Negative Going Threshold V Supply Undervoltage L V + LUV 7.6 8.9 9.9 V Positive Going Threshold V Supply Undervoltage L V -- LUV 6.7 8.1 9.5 V Negative Going Threshold Output High Short Circuit Pulsed Current I+V =0, PW10s 200 250 mA O OUT Output Low Short Circuit Pulsed Current I -- V =15V, PW10s 420 500 mA O OUT No.8203-2/9