Ordering number : ENA1967A WPH4003 N-Channel Power MOSFET WPH4003 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 1700 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1360V, V =0V 1mA DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 24V GS DS D Forward Transfer Admittance yfs V =20V, I =1.5A 1.2 2.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =1.5A, V =10V 8.2 10.5 DS D GS Input Capacitance Ciss 850 pF Output Capacitance Coss V =30V, f=1MHz 90 pF DS Reverse Transfer Capacitance Crss 27 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 21 ns r See Fig.2 Turn-OFF Delay Time t (off) 200 ns d Fall Time t 55 ns f Total Gate Charge Qg 48 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =3A 6nC DS GS D Gate-to-Drain Miller Charge Qgd 22 nC Diode Forward Voltage V I =3A, V =0V 0.8 1.5 V SD S GS Reverse Recovery Time t See Fig.3 410 ns rr Reverse Recovery Charge Q I =3A, V =0V, di/dt=100A/ s 3000 nC rr S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD D L 10V 0V 50 I =1.5A RG D G V R =125 IN L D V WPH4003 OUT S PW10s 10V D.C.1% 50 V DD 0V G S WPH4003 P.G 50 Fig.3 Reverse Recovery Time Test Circuit D WPH4003 500H G S V =50V DD Driver MOSFET Ordering Information Device Package Shipping memo WPH4003-1E TO-3PF-3L 30pcs./magazine Pb Free No. A1967-2/7