2016-03-01 Silicon Photodiode with V Characteristic Version 1.0 SFH 2440 Features: Spectral sensitivity adapted to Human Eye Sensitivity (V ) Low temperature coefficient of spectral sensitivity High linearity DIL plastic package with high packing density Fast switching time Applications Ambient light sensor (Mobile phone, regulation of air conditioning) Bio Monitoring Ordering Information Type: Spectral sensitivity Ordering Code S nA/Ix V = 5 V, standard light A, T = R 2856 K SFH 2440 9.4 Q65111A8524 2016-03-01 1Version 1.0 SFH 2440 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operating and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 16 V R Total Power dissipation P 150 mW tot ESD withstand voltage V 1500 V ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (T = 25 C) A Parameter Symbol Values Unit Spectral sensitivity (typ) S 9.4 ( 7) nA/Ix (V = 5 V, standard light A, T = 2856 K) R Wavelength of max. sensitivity (typ) 620 nm S max Spectral range of sensitivity (typ) (typ) 400 nm 10% ... 690 2 Radiant sensitive area (typ) A 7.02 mm Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x mm Half angle (typ) 60 Dark current (typ (max)) I 1 ( 10) nA R (V = 5 V) R Spectral sensitivity of the chip (typ) S 0.37 A / W typ ( = 550 nm) Quantum yield of the chip (typ) 0.83 Electro ( = 550 nm) ns /Photon Short-circuit current (typ) I 8.1 A SC (E = 1000 lx, Std. Light A) v Rise and fall time (typ) t , t 0.09 s r f (V = 5 V, R = 50 , = 550 nm) R L Forward voltage (typ) V 1 V F (I = 100 mA, E = 0) F Capacitance (typ) C 135 pF 0 (V = 0 V, f = 1 MHz, E = 0) R Noise equivalent power (typ) NEP 0.048 pW / (V = 5 V, = 550 nm) Hz R * Detection limit (typ) D 5.5e12 cm x Hz / W 2016-03-01 2