2016-03-03 IR SYNIOS P2720 (850 nm) - 120 Version 1.0 SFH 4770S A01 Features: IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm Superior Corrosion Robustness (see chapter package outlines) The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras Eye tracking systems Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Total Radiant Flux Ordering Code mW e I = 1A, t = 10 ms F p SFH 4770S A01 1140 ( 800) Q65112A0523 Note: Measured with integrating sphere. 2016-03-03 1Version 1.0 SFH 4770S A01 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 125 C op stg Junction temperature T 145 C j Forward current I 1500 mA F Surge current I 3 A FSM (t 200 s, D = 0) p Power consumption P 5800 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Thermal resistance junction - solder point R 9 K / W thJS Note: For the forward current and power consumption please seemaximum permissible forward curren diagram Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 1 A, t = 10 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 1 A, t = 10 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 1 A, t = 10 ms) F p Half angle (typ) 60 Dimensions of active chip area (typ) L x W 1 x 1 mm x mm Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 11 / 14 ns e e max r f (I = 3 A, R = 50 ) F L Forward voltage (typ (max)) V 3.2 ( 3.6) V F (I = 1 A, t = 10 ms) F p Forward voltage (typ (max)) V 3.35 ( 3.85) V F (I = 1.5 A, t = 100 s) F p Forward voltage (typ (max)) V 3.8 ( 4.7) V F (I = 3 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Radiant intensity I 350 mW/sr e, typ (I = 1 A, t = 10 ms) F p Radiant intensity I 530 mW/sr e, typ (I = 1.5 A, t = 100 s) F p 2016-03-03 2