X-On Electronics has gained recognition as a prominent supplier of 2SA15320CL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA15320CL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA15320CL Panasonic

2SA15320CL electronic component of Panasonic
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Part No.2SA15320CL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 20V 0.03A SMINI-3P
Datasheet: 2SA15320CL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.2918
10 : USD 0.2447
100 : USD 0.2081
N/A

   
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RoHS - XON
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We are delighted to provide the 2SA15320CL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA15320CL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm Complementary to 2SC3930 +0.10 +0.1 0.15 0.3 0.0 0.05 3 Features High transition frequency f T S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO 1: Base Collector-emitter voltage (Base open) V 20 V CEO 2: Emitter Emitter-base voltage (Collector open) V 5V 3: Collector EBO EIAJ: SC-70 Collector current I 30 mA C SMini3-G1 Package Collector power dissipation P 150 mW C Marking Symbol: E Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Base-emitter saturation voltage V V = 10 A, I = 1 mA 0.7 V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C * Forward current transfer ratio h V = 10 V, I = 1 mA 50 220 FE CB E Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.1 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 150 300 MHz T CB E Noise figure NF V = 10 V, I = 1 mA, f = 5 MHz 2.8 4.0 dB CB E Reverse transfer impedance Z V = 10 V, I = 1 mA, f = 2 MHz 22 60 rb CB E Common-emitter reverse transfer capacitance C V = 10 V, I = 1 mA, f = 10.7 MHz 1.2 2.0 pF re CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank A B C h 50 to 100 70 to 140 110 to 220 FE Publication date: January 2003 SJC00021BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1532 P T I V V I C a C CE CE(sat) C 100 200 30 I / I = 10 C B T = 25C a 180 25 160 10 140 I = 250 A B 20 120 200 A 100 15 1 T = 75C a 150 A 80 25C 10 100 A 60 25C 0.1 40 50 A 5 20 0 0 0.01 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.1 1 10 100 ( ) ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I mA a CE C h I C V C V FE C ob CB re CE 120 6 5 f = 1 MHz V = 10 V CE I = 1 mA C I = 0 E f = 10.7 MHz T = 25C a T = 25C a 100 5 T = 75C 4 a 80 4 25C 3 25C 60 3 2 40 2 1 20 1 0 0 0 0.1 1 10 100 1 10 100 0.1 1 10 100 ( ) Collector current I mA Collector-base voltage V (V) Collector-emitter voltage V (V) C CB CE f I G I NF I T E P C E 600 24 5 V = 10 V CE V = 10 V V = 10 V CB CB f = 100 MHz T = 25C f = 100 MHz a T = 25C a T = 25C 500 20 a 4 400 16 3 300 12 2 8 200 1 4 100 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 ( ) ( ) Emitter current I mA Collector current I mA Emitter current I (mA) E C E 2 SJC00021BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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