This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SC4391 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V 0.65 max. CE(sat) High collector-emitter voltage (Base open) V CEO Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 80 V +0.10 +0.10 CBO 0.45 0.45 0.05 0.05 1.050.05 Collector-emitter voltage (Base open) V 80 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 5V EBO 1: Emitter 2: Collector Collector current I 1A C 123 3: Base Peak collector current I 1.5 A CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Printed circuit board: Copper foil area of 1 cm or more, and the * board thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 80 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 80 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 40 V, I = 0 0.1 A CBO CB E 2 * Forward current transfer ratio h V = 2 V, I = 100 mA 120 340 FE1 CE C 1 * h V = 2 V, I = 500 mA 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.3 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 15 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 120 to 240 170 to 340 FE1 Publication date: March 2003 SJC00025BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1674 P T I V V I C a C CE CE(sat) C 1.2 1.2 10 I / I = 10 C B Copper plate at the collector T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 1.0 1.0 I = 8 mA B 7 mA 1 6 mA 0.8 0.8 5 mA T = 75C a 4 mA 25C 0.6 0.6 0.1 3 mA 25C 0.4 0.4 2 mA 0.01 0.2 0.2 1 mA 0 0 0.001 0 2 4 6 8 10 0 40 80 120 160 0.01 0.1 1 10 ( ) Ambient temperature T (C) Collector-emitter voltage V V Collector current I (A) a CE C V I h I f I BE(sat) C FE C T E 100 500 200 I / I = 10 V = 10 V C B CB V = 2 V CE T = 25C a 400 160 10 300 120 T = 75C T = 25C a a 25C 1 75C 25C 200 80 25C 0.1 100 40 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 Collector current I (A) Collector current I (A) Emitter current I (mA) C C E C V ob CB 60 I = 0 E f = 1 MHz T = 25C a 50 40 30 20 10 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00025BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.