X-On Electronics has gained recognition as a prominent supplier of 2SB07920SL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB07920SL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB07920SL Panasonic

2SB07920SL electronic component of Panasonic
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Part No.2SB07920SL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 150V 0.05A SC-59
Datasheet: 2SB07920SL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0887
N/A

0
MOQ : 1
Multiples : 1
1 : USD 0.2457
10 : USD 0.1552
100 : USD 0.1114
500 : USD 0.0935
1000 : USD 0.0878
N/A

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SB07920SL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB07920SL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0792 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplication Package Features High collector-emitter voltage (Base open) V Code CEO Low noise voltage NV Mini3-G1 Mini type package, allowing downsizing of the equipment and automatic Pin Name insertion through the tape packing. 1. Base 2. Emitter Absolute Maximum Ratings T = 25C 3. Collector a Parameter Symbol Rating Unit Marking Symbol: I Collector-base voltage (Emitter open) V 150 V CBO Collector-emitter voltage (Base open) V 150 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 mA, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 mA CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 450 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common base, input open circuited) V = 10 V, I = 1 mA, G = 80 dB, CB C V Noise voltage NV 150 mV R = 100 k, Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classication * Rank R S T h 130 to 220 185 to 330 260 to 450 FE Merking symbol IR IS IT Publication date : October 2008 SJC00058CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0792 2SB0792A I -V 2SB0792 I -V 2SB0792A P -T C CE C BE C a P T I V I V C a C CE C BE 100 120 240 V = 5 V T = 25C CE a I = 10 mA 25C B 9 mA 100 200 80 8 mA T = 75C 25C a 7 mA 6 mA 160 5 mA 80 60 4 mA 60 120 3 mA 40 40 80 2 mA 20 1 mA 20 40 0 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 ( ) ( ) Ambient temperature T (C) Collector-emitter voltage V V Base-emitter voltage V V a CE BE 2SB0792A V -I 2SB0792A h -I 2SB0792A f -I CE(sat) C FE C T E V I h I f I CE(sat) C FE C T E 100 600 250 I / I = 10 V = 10 V C B V = 5 V CB CE T = 25C a 500 200 10 400 T = 75C a 150 1 300 25C T = 75C a 100 25C 25C 200 25C 0.1 50 100 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E 2SB0792A C -V ob CB C V ob CB 10 I = 0 E f = 1 MHz T = 25C a 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00058CED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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